Part Details for MT28C64416W18ABW-F605P70KTWT by Micron Technology Inc
Overview of MT28C64416W18ABW-F605P70KTWT by Micron Technology Inc
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- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Internet of Things (IoT)
Environmental Monitoring
Financial Technology (Fintech)
Smart Cities
Transportation and Logistics
Agriculture Technology
Telecommunications
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Education and Research
Consumer Electronics
Security and Surveillance
Audio and Video Systems
Computing and Data Storage
Healthcare
Entertainment and Gaming
Part Details for MT28C64416W18ABW-F605P70KTWT
MT28C64416W18ABW-F605P70KTWT CAD Models
MT28C64416W18ABW-F605P70KTWT Part Data Attributes
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MT28C64416W18ABW-F605P70KTWT
Micron Technology Inc
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Datasheet
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MT28C64416W18ABW-F605P70KTWT
Micron Technology Inc
Memory Circuit, Flash+SRAM, 4MX16, CMOS, PBGA77, 8 X 10 MM, LEAD FREE, FBGA-77
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | MICRON TECHNOLOGY INC | |
| Part Package Code | BGA | |
| Package Description | TFBGA, BGA77,8X10,32 | |
| Pin Count | 77 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.71 | |
| Access Time-Max | 70 ns | |
| Additional Feature | CELLULAR RAM IS ORGANIZED AS 1M X 16 | |
| JESD-30 Code | R-PBGA-B77 | |
| JESD-609 Code | e1 | |
| Length | 10 mm | |
| Memory Density | 67108864 bit | |
| Memory IC Type | MEMORY CIRCUIT | |
| Memory Width | 16 | |
| Mixed Memory Type | FLASH+SRAM | |
| Number of Functions | 1 | |
| Number of Terminals | 77 | |
| Number of Words | 4194304 words | |
| Number of Words Code | 4000000 | |
| Operating Mode | ASYNCHRONOUS | |
| Operating Temperature-Max | 85 °C | |
| Operating Temperature-Min | -25 °C | |
| Organization | 4MX16 | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TFBGA | |
| Package Equivalence Code | BGA77,8X10,32 | |
| Package Shape | RECTANGULAR | |
| Package Style | GRID ARRAY, THIN PROFILE, FINE PITCH | |
| Peak Reflow Temperature (Cel) | 260 | |
| Qualification Status | Not Qualified | |
| Seated Height-Max | 1.2 mm | |
| Standby Current-Max | 0.000115 A | |
| Supply Voltage-Max (Vsup) | 1.95 V | |
| Supply Voltage-Min (Vsup) | 1.7 V | |
| Supply Voltage-Nom (Vsup) | 1.8 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | OTHER | |
| Terminal Finish | TIN SILVER COPPER | |
| Terminal Form | BALL | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | BOTTOM | |
| Width | 8 mm |
Alternate Parts for MT28C64416W18ABW-F605P70KTWT
This table gives cross-reference parts and alternative options found for MT28C64416W18ABW-F605P70KTWT. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MT28C64416W18ABW-F605P70KTWT, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| MT28C128564W30DBW-F705P70TBWT | Memory Circuit, 4MX16, CMOS, PBGA77, LEAD FREE, FBGA-77 | Micron Technology Inc | MT28C64416W18ABW-F605P70KTWT vs MT28C128564W30DBW-F705P70TBWT |
| MT28C64416W30AFW-F70P70KBWT | Memory Circuit, Flash+SRAM, 4MX16, CMOS, PBGA77, 8 X 10 MM, FBGA-77 | Micron Technology Inc | MT28C64416W18ABW-F605P70KTWT vs MT28C64416W30AFW-F70P70KBWT |
| MT28C128564W18DFW-F70P85KBTWT | Memory Circuit, Flash+SRAM, 4MX16, CMOS, PBGA77, FBGA-77 | Micron Technology Inc | MT28C64416W18ABW-F605P70KTWT vs MT28C128564W18DFW-F70P85KBTWT |
| MT28C128564W18DFW-F605P70KTBWT | Memory Circuit, 4MX16, CMOS, PBGA77, FBGA-77 | Micron Technology Inc | MT28C64416W18ABW-F605P70KTWT vs MT28C128564W18DFW-F605P70KTBWT |
| MT28C128564W18DBW-F705P85BTWT | Memory Circuit, 4MX16, CMOS, PBGA77, LEAD FREE, FBGA-77 | Micron Technology Inc | MT28C64416W18ABW-F605P70KTWT vs MT28C128564W18DBW-F705P85BTWT |
| MT28C64432W18AFW-F605P85KBWT | Memory Circuit, Flash+SRAM, 4MX16, CMOS, PBGA77, 8 X 10 MM, FBGA-77 | Micron Technology Inc | MT28C64416W18ABW-F605P70KTWT vs MT28C64432W18AFW-F605P85KBWT |
| MT28C64432W18ABW-F606P70KTWT | Memory Circuit, Flash+SRAM, 4MX16, CMOS, PBGA77, 8 X 10 MM, LEAD FREE, FBGA-77 | Micron Technology Inc | MT28C64416W18ABW-F605P70KTWT vs MT28C64432W18ABW-F606P70KTWT |
| MT28C64416W30ABW-F705P70KTWT | Memory Circuit, Flash+SRAM, 4MX16, CMOS, PBGA77, 8 X 10 MM, LEAD FREE, FBGA-77 | Micron Technology Inc | MT28C64416W18ABW-F605P70KTWT vs MT28C64416W30ABW-F705P70KTWT |
| MT28C64432W30AFW-F705P70KBWT | Memory Circuit, Flash+SRAM, 4MX16, CMOS, PBGA77, 8 X 10 MM, FBGA-77 | Micron Technology Inc | MT28C64416W18ABW-F605P70KTWT vs MT28C64432W30AFW-F705P70KBWT |
| MT28C64416W18ABW-F706P85BWT | Memory Circuit, Flash+SRAM, 4MX16, CMOS, PBGA77, 8 X 10 MM, LEAD FREE, FBGA-77 | Micron Technology Inc | MT28C64416W18ABW-F605P70KTWT vs MT28C64416W18ABW-F706P85BWT |