Part Details for MT16JSF25664HY-1G4D1 by Micron Technology Inc
Overview of MT16JSF25664HY-1G4D1 by Micron Technology Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part Details for MT16JSF25664HY-1G4D1
MT16JSF25664HY-1G4D1 CAD Models
MT16JSF25664HY-1G4D1 Part Data Attributes:
|
|
MT16JSF25664HY-1G4D1
Micron Technology Inc
Buy Now
Datasheet
|
Compare Parts:
MT16JSF25664HY-1G4D1
Micron Technology Inc
DDR DRAM Module, 256MX64, CMOS, LEAD FREE, MO-268, SODIMM-204
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | MICRON TECHNOLOGY INC | |
| Part Package Code | SODIMM | |
| Package Description | DIMM, | |
| Pin Count | 204 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.36 | |
| Access Mode | DUAL BANK PAGE BURST | |
| Additional Feature | AUTO/SELF REFRESH | |
| JESD-30 Code | R-XZMA-N204 | |
| JESD-609 Code | e4 | |
| Memory Density | 17179869184 bit | |
| Memory IC Type | DDR DRAM MODULE | |
| Memory Width | 64 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 204 | |
| Number of Words | 268435456 words | |
| Number of Words Code | 256000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 256MX64 | |
| Package Body Material | UNSPECIFIED | |
| Package Code | DIMM | |
| Package Shape | RECTANGULAR | |
| Package Style | MICROELECTRONIC ASSEMBLY | |
| Peak Reflow Temperature (Cel) | 260 | |
| Qualification Status | Not Qualified | |
| Self Refresh | YES | |
| Supply Voltage-Max (Vsup) | 1.575 V | |
| Supply Voltage-Min (Vsup) | 1.425 V | |
| Supply Voltage-Nom (Vsup) | 1.5 V | |
| Surface Mount | NO | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Finish | Gold (Au) | |
| Terminal Form | NO LEAD | |
| Terminal Position | ZIG-ZAG | |
| Time@Peak Reflow Temperature-Max (s) | 30 |
Alternate Parts for MT16JSF25664HY-1G4D1
This table gives cross-reference parts and alternative options found for MT16JSF25664HY-1G4D1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MT16JSF25664HY-1G4D1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| M471B5773CHS-CH9 | DDR DRAM Module, 256MX8, 0.25ns, CMOS, HALOGEN FREE AND ROHS COMPLIANT, SODIMM-204 | Samsung Semiconductor | MT16JSF25664HY-1G4D1 vs M471B5773CHS-CH9 |
| MT8KSF25664HZ-1G1D1 | DDR DRAM Module, 256MX64, CMOS, HALOGEN FREE, MO-268, SODIMM-204 | Micron Technology Inc | MT16JSF25664HY-1G4D1 vs MT8KSF25664HZ-1G1D1 |
| HMT425S6AFR6C-RD | DDR DRAM Module, 256MX64, 0.195ns, CMOS, ROHS COMPLIANT, SODIMM-204 | SK Hynix Inc | MT16JSF25664HY-1G4D1 vs HMT425S6AFR6C-RD |
| IMSH2GS13A1F1CT13H | DDR DRAM Module, 256MX64, CMOS, GREEN, SO-DIMM-204 | Qimonda AG | MT16JSF25664HY-1G4D1 vs IMSH2GS13A1F1CT13H |
| HMT125S6AFP6C-G8 | DDR DRAM Module, 256MX64, 20ns, CMOS, LEAD FREE, SODIMM-204 | SK Hynix Inc | MT16JSF25664HY-1G4D1 vs HMT125S6AFP6C-G8 |
| MT16JSF25664HY-80CD1 | DDR DRAM Module, 256MX64, CMOS, LEAD FREE, MO-268, SODIMM-204 | Micron Technology Inc | MT16JSF25664HY-1G4D1 vs MT16JSF25664HY-80CD1 |
| HMT325S6BFR6C-PB | DDR DRAM Module, 256MX64, 20ns, CMOS, ROHS COMPLIANT, SODIMM-204 | SK Hynix Inc | MT16JSF25664HY-1G4D1 vs HMT325S6BFR6C-PB |
| EBJ21UE8BDS0-AE-F | DRAM Module, 256MX64, CMOS, HALOGEN FREE AND ROHS COMPLIANT, SODIMM-204 | Elpida Memory Inc | MT16JSF25664HY-1G4D1 vs EBJ21UE8BDS0-AE-F |
| HMT125S6DFR8C-H9 | DDR DRAM, 256MX64, 20ns, CMOS, ROHS COMPLIANT, SODIMM-204 | SK Hynix Inc | MT16JSF25664HY-1G4D1 vs HMT125S6DFR8C-H9 |
| M471B5773CHS-YH9 | DDR DRAM Module, 256MX64, 0.255ns, CMOS, SODIMM-204 | Samsung Semiconductor | MT16JSF25664HY-1G4D1 vs M471B5773CHS-YH9 |