Datasheets
MSM511000B-60RS by:

Fast Page DRAM, 1MX1, 60ns, CMOS, PDIP18

Part Details for MSM511000B-60RS by LAPIS Semiconductor Co Ltd

Overview of MSM511000B-60RS by LAPIS Semiconductor Co Ltd

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Applications Education and Research Consumer Electronics Computing and Data Storage

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Part Details for MSM511000B-60RS

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MSM511000B-60RS Part Data Attributes

MSM511000B-60RS LAPIS Semiconductor Co Ltd
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MSM511000B-60RS LAPIS Semiconductor Co Ltd Fast Page DRAM, 1MX1, 60ns, CMOS, PDIP18
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer LAPIS SEMICONDUCTOR CO LTD
Package Description DIP, DIP18,.3
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8542.32.00.02
Access Time-Max 60 ns
I/O Type SEPARATE
JESD-30 Code R-PDIP-T18
JESD-609 Code e0
Memory Density 1048576 bit
Memory IC Type FAST PAGE DRAM
Memory Width 1
Number of Terminals 18
Number of Words 1048576 words
Number of Words Code 1000000
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 1MX1
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code DIP
Package Equivalence Code DIP18,.3
Package Shape RECTANGULAR
Package Style IN-LINE
Qualification Status Not Qualified
Refresh Cycles 512
Standby Current-Max 0.001 A
Supply Current-Max 0.09 mA
Supply Voltage-Nom (Vsup) 5 V
Surface Mount NO
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form THROUGH-HOLE
Terminal Pitch 2.54 mm
Terminal Position DUAL

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