Part Details for MSCSM120VR1M31C1AG by Microchip Technology Inc
Results Overview of MSCSM120VR1M31C1AG by Microchip Technology Inc
- Distributor Offerings: (10 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Space Technology
Environmental Monitoring
Internet of Things (IoT)
Smart Cities
Agriculture Technology
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Medical Imaging
Consumer Electronics
Education and Research
Security and Surveillance
Aerospace and Defense
Healthcare
Robotics and Drones
MSCSM120VR1M31C1AG Information
MSCSM120VR1M31C1AG by Microchip Technology Inc is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for MSCSM120VR1M31C1AG
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
57AK6157
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Newark | Pm-Mosfet-Sic-Sbd-Sp1F Rohs Compliant: Yes |Microchip MSCSM120VR1M31C1AG RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$120.6900 / $129.3100 | Buy Now |
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DISTI #
150-MSCSM120VR1M31C1AG-ND
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DigiKey | MOSFET 2N-CH 1200V 89A Min Qty: 1 Lead time: 18 Weeks Container: Tube | Temporarily Out of Stock |
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$134.7000 / $161.6400 | Buy Now |
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DISTI #
MSCSM120VR1M31C1AG
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Avnet Americas | Silicon Carbide MOSFET, Dual N Channel, 89 A, 1200 V, 31 Milliohms, Module - Bulk (Alt: MSCSM120VR1M... more RoHS: Not Compliant Min Qty: 5 Package Multiple: 1 Lead time: 18 Weeks, 0 Days Container: Bulk | 0 |
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$127.0490 / $135.6698 | Buy Now |
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DISTI #
494-120VR1M31C1AG
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Mouser Electronics | Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-SP1F RoHS: Compliant | 0 |
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$134.7000 / $161.6400 | Order Now |
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DISTI #
MSCSM120VR1M31C1AG
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Microchip Technology Inc | CC8165, Projected EOL: 2049-07-11 Lead time: 18 Weeks, 0 Days |
0 Alternates Available |
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$102.3700 / $161.6400 | Buy Now |
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Future Electronics | RoHS: Not Compliant pbFree: No Min Qty: 1 Package Multiple: 1 | 0 |
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$145.6300 / $152.9100 | Buy Now |
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Onlinecomponents.com | RoHS: Compliant | 0 |
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$128.0800 / $134.7000 | Buy Now |
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NAC | RoHS: Compliant Min Qty: 2 Package Multiple: 1 | 0 |
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$131.4100 / $153.9400 | Buy Now |
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DISTI #
MSCSM120VR1M31C
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Richardson RFPD | SILICON CARBIDE MOSFET MODULES RoHS: Compliant Min Qty: 1 | 0 |
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$141.8300 / $145.5800 | Buy Now |
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Master Electronics | RoHS: Compliant | 0 |
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$128.0800 / $134.7000 | Buy Now |
Part Details for MSCSM120VR1M31C1AG
MSCSM120VR1M31C1AG CAD Models
MSCSM120VR1M31C1AG Part Data Attributes
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MSCSM120VR1M31C1AG
Microchip Technology Inc
Buy Now
Datasheet
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Compare Parts:
MSCSM120VR1M31C1AG
Microchip Technology Inc
Power Field-Effect Transistor
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| Part Life Cycle Code | Active | |
| Ihs Manufacturer | MICROCHIP TECHNOLOGY INC | |
| Package Description | MODULE-12 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 18 Weeks | |
| Case Connection | ISOLATED | |
| Configuration | COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 1200 V | |
| Drain Current-Max (ID) | 89 A | |
| Drain-source On Resistance-Max | 0.031 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 25 pF | |
| JESD-30 Code | R-XUFM-X12 | |
| Number of Elements | 2 | |
| Number of Terminals | 12 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -40 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 180 A | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON CARBIDE |