Datasheets
MSCSM120AM50CT1AG by: Microchip Technology Inc

Power Field-Effect Transistor, 55A I(D), 1200V, 0.05ohm, 2-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET

Part Details for MSCSM120AM50CT1AG by Microchip Technology Inc

Overview of MSCSM120AM50CT1AG by Microchip Technology Inc

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Applications Education and Research Aerospace and Defense Agriculture Technology Robotics and Drones

Price & Stock for MSCSM120AM50CT1AG

Part # Distributor Description Stock Price Buy
DISTI # 78AH6522
Newark Pm-Mosfet-Sic-Sbd-Sp1F Rohs Compliant: Yes |Microchip MSCSM120AM50CT1AG RoHS: Compliant Min Qty: 9 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 1 $89.7600
  • 50 $74.8000
  • 100 $65.8200
  • 250 $65.8200
  • 500 $65.8200
$65.8200 / $89.7600 Buy Now
DISTI # 150-MSCSM120AM50CT1AG-ND
DigiKey MOSFET 2N-CH 1200V 55A SP1F Min Qty: 1 Lead time: 23 Weeks Container: Tube 14
In Stock
  • 1 $89.7600
  • 100 $74.8000
$74.8000 / $89.7600 Buy Now
DISTI # MSCSM120AM50CT1AG
Avnet Americas Transistor MOSFET Array Dual 1200V 55A Screw Mount - Bulk (Alt: MSCSM120AM50CT1AG) RoHS: Not Compliant Min Qty: 9 Package Multiple: 1 Lead time: 23 Weeks, 0 Days Container: Bulk 0
  • 9 $86.6307
$86.6307 Buy Now
DISTI # 494-120AM50CT1AG
Mouser Electronics Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-SP1F RoHS: Compliant 9
  • 1 $89.7600
$89.7600 Buy Now
DISTI # MSCSM120AM50CT1AG
Microchip Technology Inc CC8153, Projected EOL: 2044-04-30 RoHS: Compliant pbFree: Yes 0

Alternates Available
  • 1 $89.7600
  • 50 $74.8000
  • 100 $65.8200
  • 250 $64.0300
  • 500 $62.2300
  • 1,000 $59.8400
  • 5,000 $56.2400
$56.2400 / $89.7600 Buy Now
Future Electronics victron RoHS: Compliant pbFree: Yes Min Qty: 100 Package Multiple: 100 Lead time: 23 Weeks Container: Bulk 0
Bulk
  • 100 $71.5700
$71.5700 Buy Now
Onlinecomponents.com Pm-Mosfet-Sic-Sbd-Sp1F Rohs Compliant: Yes |Microchip MSCSM120AM50CT1AG RoHS: Compliant 3 In Stock
9 On Order
  • 1 $89.3100
  • 3 $88.0000
  • 5 $87.1200
  • 7 $86.2500
  • 9 $80.2700
$80.2700 / $89.3100 Buy Now
DISTI # 82399237
Verical Phase Leg SiC MOSFET Power Module RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 2424 Americas - 3
  • 1 $116.1030
  • 3 $114.4000
  • 5 $113.2560
  • 7 $112.1250
  • 9 $104.3510
$104.3510 / $116.1030 Buy Now
NAC UNRLS CC8153 RoHS: Compliant Min Qty: 4 Package Multiple: 1 Container: Tube 0
  • 1 $85.4900
  • 100 $78.7400
  • 500 $74.8000
  • 800 $72.9800
$72.9800 / $85.4900 Buy Now
DISTI # MSCSM120AM50CT1
Richardson RFPD SILICON CARBIDE MOSFET MODULES RoHS: Compliant Min Qty: 9 0
  • 9 $80.8500
  • 25 $78.7500
$78.7500 / $80.8500 Buy Now
DISTI # MSCSM120AM50CT1AG
Avnet Silica Transistor MOSFET Array Dual 1200V 55A Screw Mount (Alt: MSCSM120AM50CT1AG) RoHS: Compliant Min Qty: 9 Package Multiple: 1 Lead time: 25 Weeks, 0 Days Silica - 0
Buy Now
DISTI # MSCSM120AM50CT1AG
EBV Elektronik Transistor MOSFET Array Dual 1200V 55A Screw Mount (Alt: MSCSM120AM50CT1AG) RoHS: Compliant Min Qty: 9 Package Multiple: 1 Lead time: 24 Weeks, 0 Days EBV - 0
Buy Now
Master Electronics Pm-Mosfet-Sic-Sbd-Sp1F Rohs Compliant: Yes |Microchip MSCSM120AM50CT1AG RoHS: Compliant 3 In Stock
9 On Order
  • 1 $89.3100
  • 3 $88.0000
  • 5 $87.1200
  • 7 $86.2500
  • 9 $80.2700
$80.2700 / $89.3100 Buy Now

Part Details for MSCSM120AM50CT1AG

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MSCSM120AM50CT1AG Part Data Attributes

MSCSM120AM50CT1AG Microchip Technology Inc
Buy Now Datasheet
Compare Parts:
MSCSM120AM50CT1AG Microchip Technology Inc Power Field-Effect Transistor, 55A I(D), 1200V, 0.05ohm, 2-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET
Part Life Cycle Code Active
Ihs Manufacturer MICROCHIP TECHNOLOGY INC
Package Description MODULE-12
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.50.00.80
Factory Lead Time 23 Weeks
Samacsys Manufacturer Microchip
Case Connection ISOLATED
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
DS Breakdown Voltage-Min 1200 V
Drain Current-Max (ID) 55 A
Drain-source On Resistance-Max 0.05 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 17 pF
JESD-30 Code R-XUFM-X12
Number of Elements 2
Number of Terminals 12
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -40 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 245 W
Pulsed Drain Current-Max (IDM) 110 A
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Transistor Application SWITCHING
Transistor Element Material SILICON CARBIDE

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