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Transistors / Power Field-Effect Transistors / MSCSM120AM02CT6LIAG
Datasheets
MSCSM120AM02CT6LIAG by:

Power Field-Effect Transistor, 947A I(D), 1200V, 0.0026ohm, 2-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET

Part Details for MSCSM120AM02CT6LIAG by Microchip Technology Inc

Overview of MSCSM120AM02CT6LIAG by Microchip Technology Inc

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Price & Stock for MSCSM120AM02CT6LIAG

Part # Distributor Description Stock Price Buy
DISTI # 78AH6511
Newark Pm-Mosfet-Sic-Sbd-Sp6C Li Rohs Compliant: Yes |Microchip MSCSM120AM02CT6LIAG RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 1 $1,558.6500
  • 50 $1,291.4500
  • 100 $1,157.8500
  • 250 $1,113.3200
  • 500 $979.7200
$979.7200 / $1,558.6500 Buy Now
DISTI # 150-MSCSM120AM02CT6LIAG-ND
DigiKey MOSFET 2N-CH 1200V 947A SP6C LI Min Qty: 1 Lead time: 23 Weeks Container: Tube 1
In Stock
  • 1 $1,558.6600
$1,558.6600 Buy Now
DISTI # 494-SM120AM02CT6LIAG
Mouser Electronics Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-SP6C LI RoHS: Compliant 11
  • 1 $1,558.6500
$1,558.6500 Buy Now
DISTI # V99:2348_24577321
Arrow Electronics Very Low Stray Inductance Phase Leg SiC MOSFET Power Module RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 23 Weeks Date Code: 2412 Americas - 12
  • 1 $1,375.1200
$1,375.1200 Buy Now
DISTI # MSCSM120AM02CT6LIAG
Microchip Technology Inc CC6272, Projected EOL: 2044-04-30 RoHS: Compliant pbFree: Yes 1

Alternates Available
  • 1 $1,558.6500
  • 50 $1,291.4500
  • 100 $1,157.8500
  • 250 $1,113.3200
  • 500 $979.7200
  • 1,000 $890.6600
  • 5,000 $783.7800
$783.7800 / $1,558.6500 Buy Now
Future Electronics N Channel 1200 V 947 A 2.6 mohm Chassis Mount Mosfat Power Module - SP6C LI RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Lead time: 23 Weeks Container: Bulk 0
Bulk
  • 1 $1,415.5700
  • 2 $1,381.4500
  • 3 $1,348.1600
$1,348.1600 / $1,415.5700 Buy Now
Onlinecomponents.com   RoHS: Compliant 1 Factory Stock
  • 1 $1,127.4200
  • 3 $1,099.5700
  • 5 $1,083.0800
  • 10 $1,066.8300
$1,066.8300 / $1,127.4200 Buy Now
DISTI # 80318625
Verical Very Low Stray Inductance Phase Leg SiC MOSFET Power Module RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 2412 Americas - 12
  • 1 $1,375.1200
$1,375.1200 Buy Now
DISTI # 80623037
Verical Very Low Stray Inductance Phase Leg SiC MOSFET Power Module RoHS: Compliant Min Qty: 1 Package Multiple: 1 Americas - 3
  • 1 $1,484.4500
$1,484.4500 Buy Now
DISTI # 59888033
Verical Very Low Stray Inductance Phase Leg SiC MOSFET Power Module RoHS: Compliant Min Qty: 1 Package Multiple: 1 Americas - 2
  • 1 $1,527.4770
$1,527.4770 Buy Now
NAC UNRLS CC6272 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Container: Tube 2
  • 1 $1,187.5500
  • 11 $1,141.8700
  • 20 $1,113.3200
$1,113.3200 / $1,187.5500 Buy Now
DISTI # MSCSM120AM02CTX
Richardson RFPD SILICON CARBIDE MOSFET MODULES RoHS: Compliant Min Qty: 1 3
  • 1 $1,203.2700
  • 25 $1,172.2200
$1,172.2200 / $1,203.2700 Buy Now
DISTI # MSCSM120AM02CT6LIAG
Avnet Silica Transistor MOSFET Array Dual N-CH 1200V Tube (Alt: MSCSM120AM02CT6LIAG) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 25 Weeks, 0 Days Silica - 0
Buy Now
DISTI # MSCSM120AM02CT6LIAG
EBV Elektronik Transistor MOSFET Array Dual N-CH 1200V Tube (Alt: MSCSM120AM02CT6LIAG) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 24 Weeks, 0 Days EBV - 0
Buy Now
Master Electronics   RoHS: Compliant 1 Factory Stock
  • 1 $1,127.4200
  • 3 $1,099.5700
  • 5 $1,083.0800
  • 10 $1,066.8300
$1,066.8300 / $1,127.4200 Buy Now

Part Details for MSCSM120AM02CT6LIAG

MSCSM120AM02CT6LIAG CAD Models

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MSCSM120AM02CT6LIAG Part Data Attributes

Parametric Data
MSCSM120AM02CT6LIAG Microchip Technology Inc
Buy Now Datasheet
Compare Parts:
MSCSM120AM02CT6LIAG Microchip Technology Inc Power Field-Effect Transistor, 947A I(D), 1200V, 0.0026ohm, 2-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer MICROCHIP TECHNOLOGY INC
Package Description MODULE-11
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.50.00.80
Factory Lead Time 37 Weeks
Samacsys Manufacturer Microchip
Case Connection ISOLATED
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
DS Breakdown Voltage-Min 1200 V
Drain Current-Max (ID) 947 A
Drain-source On Resistance-Max 0.0026 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-XUFM-X11
Number of Elements 2
Number of Terminals 11
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -40 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 3750 W
Pulsed Drain Current-Max (IDM) 1800 A
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Transistor Application SWITCHING
Transistor Element Material SILICON CARBIDE

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