Part Details for MSC025SMA120D/S by Microchip Technology Inc
Overview of MSC025SMA120D/S by Microchip Technology Inc
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Education and Research
Aerospace and Defense
Agriculture Technology
Robotics and Drones
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
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| 74AC11086D | Texas Instruments | Quadruple 2-Input Exclusive-OR Gates 16-SOIC -40 to 85 | |
| 74AC11244DW | Texas Instruments | Octal Buffers/Drivers 24-SOIC -40 to 85 | |
| 74AC11245DW | Texas Instruments | Octal Bus Transceivers 24-SOIC -40 to 85 |
Price & Stock for MSC025SMA120D/S
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
MSC025SMA120D/S
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Microchip Technology Inc | MOSFET SIC 1200 V 25 mOhm DIE, Projected EOL: 2044-04-30 RoHS: Compliant pbFree: Yes |
0 Alternates Available |
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$42.9200 / $57.3500 | Buy Now |
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Onlinecomponents.com | RoHS: Compliant | 15977 Factory Stock |
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$0 | Buy Now |
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DISTI #
MSC025SMA120D/S
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EBV Elektronik | Silicon Carbide N-Channel Power MOSFET Die (Alt: MSC025SMA120D/S) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 5 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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ES Components | Microchip MSC025SMA120D/S | 0 in Stock |
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RFQ |
Part Details for MSC025SMA120D/S
MSC025SMA120D/S CAD Models
MSC025SMA120D/S Part Data Attributes
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MSC025SMA120D/S
Microchip Technology Inc
Buy Now
Datasheet
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Compare Parts:
MSC025SMA120D/S
Microchip Technology Inc
Power Field-Effect Transistor, 103A I(D), 1200V, 0.031ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | MICROCHIP TECHNOLOGY INC | |
| Package Description | DIE-3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 1200 V | |
| Drain Current-Max (ID) | 103 A | |
| Drain-source On Resistance-Max | 0.031 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 25 pF | |
| JESD-30 Code | R-XUUC-N3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | UNCASED CHIP | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 210 A | |
| Surface Mount | YES | |
| Terminal Form | NO LEAD | |
| Terminal Position | UPPER | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON CARBIDE |