Datasheets
MS3303 by:
Advanced Power Technology
Advanced Power Technology
Microsemi Corporation
Samtec Inc
Not Found

RF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN, HERMETIC SEALED, M214, 4 PIN

Part Details for MS3303 by Advanced Power Technology

Results Overview of MS3303 by Advanced Power Technology

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Applications Consumer Electronics Security and Surveillance Environmental Monitoring Internet of Things (IoT) Space Technology Smart Cities Aerospace and Defense Healthcare Agriculture Technology Virtual Reality (VR), Augmented Reality (AR), and Vision Systems Medical Imaging Robotics and Drones

MS3303 Information

MS3303 by Advanced Power Technology is an RF Power Bipolar Transistor.
RF Power Bipolar Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Part Details for MS3303

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MS3303 Part Data Attributes

MS3303 Advanced Power Technology
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MS3303 Advanced Power Technology RF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN, HERMETIC SEALED, M214, 4 PIN
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Part Life Cycle Code Obsolete
Ihs Manufacturer ADVANCED POWER TECHNOLOGY INC
Package Description FLANGE MOUNT, R-CDFM-F2
Reach Compliance Code unknown
ECCN Code EAR99
Case Connection BASE
Collector Current-Max (IC) 1.47 A
Configuration COMMON BASE, 2 ELEMENTS
DC Current Gain-Min (hFE) 15
Highest Frequency Band L BAND
JESD-30 Code R-CDFM-F2
Number of Elements 2
Number of Terminals 2
Operating Temperature-Max 200 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type NPN
Power Gain-Min (Gp) 7.4 dB
Qualification Status Not Qualified
Surface Mount YES
Terminal Form FLAT
Terminal Position DUAL
Transistor Application AMPLIFIER
Transistor Element Material SILICON