Datasheets
MS2213 by:
Advanced Power Technology
Advanced Power Technology
Caddock Electronics Inc
Lorlin Electronics LTD
Microsemi Corporation
Vectron International
Not Found

RF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN, 0.400 X 0.400 INCH, HERMETIC SEALED, M214, 2 PIN

Part Details for MS2213 by Advanced Power Technology

Results Overview of MS2213 by Advanced Power Technology

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Applications Space Technology Environmental Monitoring Internet of Things (IoT) Industrial Automation Smart Cities Agriculture Technology Virtual Reality (VR), Augmented Reality (AR), and Vision Systems Medical Imaging Consumer Electronics Education and Research Security and Surveillance Aerospace and Defense Healthcare Robotics and Drones

MS2213 Information

MS2213 by Advanced Power Technology is an RF Power Bipolar Transistor.
RF Power Bipolar Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Part Details for MS2213

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MS2213 Part Data Attributes

MS2213 Advanced Power Technology
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MS2213 Advanced Power Technology RF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN, 0.400 X 0.400 INCH, HERMETIC SEALED, M214, 2 PIN
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Part Life Cycle Code Transferred
Ihs Manufacturer ADVANCED POWER TECHNOLOGY INC
Package Description 0.400 X 0.400 INCH, HERMETIC SEALED, M214, 2 PIN
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature HIGH RELIABILITY
Case Connection BASE
Collector Current-Max (IC) 3.5 A
Configuration SINGLE
Highest Frequency Band L BAND
JESD-30 Code S-CDFM-F2
Number of Elements 1
Number of Terminals 2
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape SQUARE
Package Style FLANGE MOUNT
Polarity/Channel Type NPN
Qualification Status Not Qualified
Surface Mount YES
Terminal Form FLAT
Terminal Position DUAL
Transistor Application AMPLIFIER
Transistor Element Material SILICON

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