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MRFX1K80H-230MHZ by: NXP Semiconductors

RF Power Field-Effect Transistor

Part Details for MRFX1K80H-230MHZ by NXP Semiconductors

Results Overview of MRFX1K80H-230MHZ by NXP Semiconductors

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MRFX1K80H-230MHZ Information

MRFX1K80H-230MHZ by NXP Semiconductors is an RF Power Field-Effect Transistor.
RF Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for MRFX1K80H-230MHZ

Part # Distributor Description Stock Price Buy
DISTI # 44AC0471
Newark Mrfx1K80H 230 Mhz Reference Circuit Rohs Compliant: Yes |Nxp MRFX1K80H-230MHZ RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 1 $1,608.7500
  • 5 $1,586.2500
  • 10 $1,563.7500
  • 25 $1,473.7500
$1,473.7500 / $1,608.7500 Buy Now
DISTI # 568-13866-ND
DigiKey MRFX1K80H REF BRD 230MHZ 1800W Min Qty: 1 Lead time: 10 Weeks Container: Bulk Temporarily Out of Stock
  • 1 $1,758.0900
$1,758.0900 Buy Now
DISTI # MRFX1K80H-230MHZ
Avnet Americas Reference Board for MRFX1K80H 230MHz Wideband RF Power LDMOS Transistors - Boxed Product (Developmen... t Kits) (Alt: MRFX1K80H-230MHZ) more RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Container: Box 0
  • 1 $1,327.5000
  • 10 $1,316.2500
  • 30 $1,305.0000
  • 50 $1,293.7500
  • 100 $1,282.5000
$1,282.5000 / $1,327.5000 Buy Now
DISTI # 771-MRFX1K80H-230MHZ
Mouser Electronics Sub-GHz Development Tools 1800W - 230MHz RoHS: Compliant 0
  • 1 $1,350.0500
$1,350.0500 Order Now
Future Electronics   RoHS: Not Compliant pbFree: No Min Qty: 1 Package Multiple: 1 0
  • 1 $1,323.5300
$1,323.5300 Buy Now
DISTI # MRFX1K80H-230M
Richardson RFPD RF TRANSISTOR TEST FIXTURE RoHS: Compliant Min Qty: 1 0
  • 1 $1,550.6800
  • 10 $1,509.8700
  • 25 $1,471.1600
  • 50 $1,432.5800
$1,432.5800 / $1,550.6800 Buy Now

Part Details for MRFX1K80H-230MHZ

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MRFX1K80H-230MHZ Part Data Attributes

MRFX1K80H-230MHZ NXP Semiconductors
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MRFX1K80H-230MHZ NXP Semiconductors RF Power Field-Effect Transistor
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Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer NXP SEMICONDUCTORS
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8473.30
Samacsys Manufacturer NXP
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

MRFX1K80H-230MHZ Frequently Asked Questions (FAQ)

  • A 4-layer PCB with a solid ground plane, separate power planes for VCC and VDD, and careful routing of RF signals is recommended. NXP provides a reference design and layout guidelines in their application notes.

  • Optimize the output power and efficiency by adjusting the input impedance, output impedance, and biasing conditions. NXP provides guidelines for impedance matching and biasing in their application notes and design guides.

  • The MRFX1K80H-230MHZ has a high power density, so thermal management is crucial. Ensure good heat dissipation by using a heat sink, thermal vias, and a thermal interface material. Keep the junction temperature below 150°C to ensure reliability.

  • Follow NXP's guidelines for PCB layout, shielding, and filtering to minimize electromagnetic interference (EMI). Use a shielded enclosure, and ensure that the device is properly grounded and decoupled.

  • The MRFX1K80H-230MHZ is a rugged device, but it's still important to follow NXP's guidelines for handling, storage, and operation. Ensure that the device is operated within its recommended operating conditions, and follow proper soldering and assembly procedures.