Part Details for MRFE6VS25GNR1 by Freescale Semiconductor
Overview of MRFE6VS25GNR1 by Freescale Semiconductor
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Applications
Consumer Electronics
Industrial Automation
Part Details for MRFE6VS25GNR1
MRFE6VS25GNR1 CAD Models
MRFE6VS25GNR1 Part Data Attributes
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MRFE6VS25GNR1
Freescale Semiconductor
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Datasheet
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MRFE6VS25GNR1
Freescale Semiconductor
Wideband RF Power LDMOS Transistor, 1.8-2000 MHz, 25 W, 50 V
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Pbfree Code | No | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | FREESCALE SEMICONDUCTOR INC | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.75 | |
Samacsys Manufacturer | NXP | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 133 V | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Highest Frequency Band | ULTRA HIGH FREQUENCY BAND | |
JESD-30 Code | R-PDFM-F2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 3 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -40 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 25 W | |
Power Gain-Min (Gp) | 24.5 dB | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 40 |