Datasheets
MRFE6VS25GN-960 by: NXP Semiconductors

RF Power Field-Effect Transistor

Part Details for MRFE6VS25GN-960 by NXP Semiconductors

Overview of MRFE6VS25GN-960 by NXP Semiconductors

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Applications Consumer Electronics Industrial Automation

Price & Stock for MRFE6VS25GN-960

Part # Distributor Description Stock Price Buy
DISTI # 33AH2835
Newark Mrfe6Vs25Gn 960-1215 Mhz Reference Circuit Rohs Compliant: Yes |Nxp MRFE6VS25GN-960 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 1 $1,072.5000
  • 5 $1,057.5000
  • 10 $1,042.5000
  • 25 $982.5000
$982.5000 / $1,072.5000 Buy Now
DISTI # 568-MRFE6VS25GN-960-ND
DigiKey MRFE6VS25GN REF BRD 1215MHZ 30W Min Qty: 1 Lead time: 10 Weeks Container: Bulk 4
In Stock
  • 1 $900.0000
$900.0000 Buy Now
DISTI # MRFE6VS25GN-960
Avnet Americas MRFE6VS25GN RF Power LDMOS Transistor 960MHz to 1215MHz Reference Circuit Board - Boxed Product (Development Kits) (Alt: MRFE6VS25GN-960) Min Qty: 1 Package Multiple: 1 Lead time: 10 Weeks, 0 Days Container: Box 0
  • 1 $1,072.5000
  • 10 $1,050.0000
  • 30 $1,020.0000
  • 50 $1,005.0000
  • 100 $982.5000
  • 250 $960.0000
  • 500 $930.0000
$930.0000 / $1,072.5000 Buy Now
DISTI # 771-MRFE6VS25GN-960
Mouser Electronics RF Development Tools MRFE6VS25GN 960-1215 MHz Reference Circuit RoHS: Compliant 2
  • 1 $900.0000
$900.0000 Buy Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Lead time: 10 Weeks 0
  • 1 $914.6400
$914.6400 Buy Now
DISTI # MRFE6VS25GN-960
Richardson RFPD RF TRANSISTOR TEST FIXTURE RoHS: Not Compliant Min Qty: 1 0
  • 1 $1,033.7800
  • 10 $1,006.5800
  • 25 $980.7700
  • 50 $955.0600
$955.0600 / $1,033.7800 Buy Now
DISTI # MRFE6VS25GN-960
Avnet Silica MRFE6VS25GN RF Power LDMOS Transistor 960MHz to 1215MHz Reference Circuit Board (Alt: MRFE6VS25GN-960) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 12 Weeks, 0 Days Silica - 0
Buy Now
DISTI # MRFE6VS25GN-960
EBV Elektronik MRFE6VS25GN RF Power LDMOS Transistor 960MHz to 1215MHz Reference Circuit Board (Alt: MRFE6VS25GN-960) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 12 Weeks, 0 Days EBV - 0
Buy Now

Part Details for MRFE6VS25GN-960

MRFE6VS25GN-960 CAD Models

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MRFE6VS25GN-960 Part Data Attributes

MRFE6VS25GN-960 NXP Semiconductors
Buy Now Datasheet
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MRFE6VS25GN-960 NXP Semiconductors RF Power Field-Effect Transistor
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer NXP SEMICONDUCTORS
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 9030.90
Factory Lead Time 10 Weeks
Samacsys Manufacturer NXP
Configuration SINGLE
DS Breakdown Voltage-Min 133 V
FET Technology METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band ULTRA HIGH FREQUENCY BAND
JESD-30 Code R-PDFM-F2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -40 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 25 W
Power Gain-Min (Gp) 24.5 dB
Surface Mount YES
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

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