Part Details for MRF8S8260HSR3 by Freescale Semiconductor
Results Overview of MRF8S8260HSR3 by Freescale Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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MRF8S8260HSR3 Information
MRF8S8260HSR3 by Freescale Semiconductor is an RF Power Field-Effect Transistor.
RF Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for MRF8S8260HSR3
MRF8S8260HSR3 CAD Models
MRF8S8260HSR3 Part Data Attributes
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MRF8S8260HSR3
Freescale Semiconductor
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Datasheet
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MRF8S8260HSR3
Freescale Semiconductor
UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, NI-880S, CASE 465C-02, 2 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | FREESCALE SEMICONDUCTOR INC | |
| Package Description | ROHS COMPLIANT, NI-880S, CASE 465C-02, 2 PIN | |
| Pin Count | 2 | |
| Manufacturer Package Code | CASE 465C-02 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.75 | |
| Case Connection | SOURCE | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 70 V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Highest Frequency Band | ULTRA HIGH FREQUENCY BAND | |
| JESD-30 Code | R-CDFP-F2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 225 °C | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLATPACK | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | SILICON |
Alternate Parts for MRF8S8260HSR3
This table gives cross-reference parts and alternative options found for MRF8S8260HSR3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MRF8S8260HSR3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| AFT09S282NR3 | Freescale Semiconductor | Check for Price | Airfast RF Power LDMOS Transistor, 720-960 MHz, 80 W Avg., 28 V | MRF8S8260HSR3 vs AFT09S282NR3 |
| MRF8S8260HSR3 | NXP Semiconductors | Check for Price | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET | MRF8S8260HSR3 vs MRF8S8260HSR3 |
| MRF8S8260HR3 | Freescale Semiconductor | Check for Price | Single W-CDMA Lateral N-Channel RF Power MOSFET, 850-895 MHz, 70 W Avg., 28 V | MRF8S8260HSR3 vs MRF8S8260HR3 |