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Transistors / RF Power Field-Effect Transistors / MRF8S21140HR3
Datasheets
MRF8S21140HR3 by:
Freescale Semiconductor
Freescale Semiconductor
NXP Semiconductors
Not Found

W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 2110-2170 MHz, 34 W Avg., 28 V

Part Details for MRF8S21140HR3 by Freescale Semiconductor

Results Overview of MRF8S21140HR3 by Freescale Semiconductor

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MRF8S21140HR3 Information

MRF8S21140HR3 by Freescale Semiconductor is an RF Power Field-Effect Transistor.
RF Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Part Details for MRF8S21140HR3

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MRF8S21140HR3 Part Data Attributes

Parametric Data
MRF8S21140HR3 Freescale Semiconductor
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MRF8S21140HR3 Freescale Semiconductor W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 2110-2170 MHz, 34 W Avg., 28 V
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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer FREESCALE SEMICONDUCTOR INC
Package Description FLANGE MOUNT, R-CDFM-F2
Pin Count 2
Manufacturer Package Code CASE 465-06
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.75
Case Connection SOURCE
Configuration SINGLE
DS Breakdown Voltage-Min 65 V
FET Technology METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band S BAND
JESD-30 Code R-CDFM-F2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 225 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount YES
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application AMPLIFIER
Transistor Element Material SILICON

Alternate Parts for MRF8S21140HR3

This table gives cross-reference parts and alternative options found for MRF8S21140HR3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MRF8S21140HR3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
MRF8HP21130HR3 Freescale Semiconductor Check for Price W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 2110-2170 MHz, 28 W Avg., 28 V MRF8S21140HR3 vs MRF8HP21130HR3
MRF8P20140WHSR3 Freescale Semiconductor Check for Price 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, NI-780S-4, CASE 465H-02, 4 PIN MRF8S21140HR3 vs MRF8P20140WHSR3
MRF8S21140HSR3 Freescale Semiconductor Check for Price W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 2110-2170 MHz, 34 W Avg., 28 V MRF8S21140HR3 vs MRF8S21140HSR3
MRF6S19060NR1 Freescale Semiconductor Check for Price 2 x N-CDMA Lateral N-Channel RF Power MOSFET, 1930-1990 MHz, 12 W Avg., 28 V MRF8S21140HR3 vs MRF6S19060NR1
MRF7S21150HSR3 Freescale Semiconductor Check for Price Single W-CDMA Lateral N-Channel RF Power MOSFET, 2110-2170 MHz, 44 W Avg., 28 V MRF8S21140HR3 vs MRF7S21150HSR3
MRF8S19260HR6 Freescale Semiconductor Check for Price Single W-CDMA Lateral N-Channel RF Power MOSFET, 1930-1990 MHz, 74 W Avg., 30 V MRF8S21140HR3 vs MRF8S19260HR6
MRF8S19140HSR3 Freescale Semiconductor Check for Price Single CDMA, W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 1930-1990 MHz, 34 W Avg., 28 V MRF8S21140HR3 vs MRF8S19140HSR3
MRF7S19080HR3 Freescale Semiconductor Check for Price Single W-CDMA Lateral N-Channel RF Power MOSFET, 1930-1990 MHz, 24 W Avg., 28 V MRF8S21140HR3 vs MRF7S19080HR3
MRF7S19170HSR3 Freescale Semiconductor Check for Price Single W-CDMA Lateral N-Channel RF Power MOSFET, 1930-1990 MHz, 50 W Avg., 28 V MRF8S21140HR3 vs MRF7S19170HSR3
MRF7S19100NBR1 Freescale Semiconductor Check for Price Single W-CDMA Lateral N-Channel RF Power MOSFET, 1930-1990 MHz, 29 W Avg., 28 V MRF8S21140HR3 vs MRF7S19100NBR1

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