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Transistors / RF Power Field-Effect Transistors / MRF8S21120HSR3
Datasheets
MRF8S21120HSR3 by:
Freescale Semiconductor
Freescale Semiconductor
NXP Semiconductors
Not Found

W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 2110-2170 MHz, 28 W Avg., 28 V

Part Details for MRF8S21120HSR3 by Freescale Semiconductor

Results Overview of MRF8S21120HSR3 by Freescale Semiconductor

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Consumer Electronics Industrial Automation Audio and Video Systems

MRF8S21120HSR3 Information

MRF8S21120HSR3 by Freescale Semiconductor is an RF Power Field-Effect Transistor.
RF Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for MRF8S21120HSR3

Part # Distributor Description Stock Price Buy
DISTI # 2156-MRF8S21120HSR3-ND
DigiKey RF MOSFET LDMOS 28V NI780 Min Qty: 4 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT 399
In Stock
  • 4 $95.7400
$95.7400 Buy Now
Rochester Electronics RF S Band, N-Channel Power MOSFET RoHS: Compliant Status: Obsolete Min Qty: 1 399
  • 1 $92.0600
  • 25 $90.2200
  • 100 $86.5400
  • 500 $82.8500
  • 1,000 $78.2500
$78.2500 / $92.0600 Buy Now

Part Details for MRF8S21120HSR3

MRF8S21120HSR3 CAD Models

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MRF8S21120HSR3 Part Data Attributes

Parametric Data
MRF8S21120HSR3 Freescale Semiconductor
Buy Now Datasheet
Compare Parts:
MRF8S21120HSR3 Freescale Semiconductor W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 2110-2170 MHz, 28 W Avg., 28 V
Select a part to compare:
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer FREESCALE SEMICONDUCTOR INC
Package Description ROHS COMPLIANT, NI-780S, CASE 465A-06, 2 PIN
Pin Count 2
Manufacturer Package Code CASE 465A-06
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.75
Case Connection SOURCE
Configuration SINGLE
DS Breakdown Voltage-Min 65 V
FET Technology METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band S BAND
JESD-30 Code R-CDFP-F2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 225 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style FLATPACK
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount YES
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application AMPLIFIER
Transistor Element Material SILICON

Alternate Parts for MRF8S21120HSR3

This table gives cross-reference parts and alternative options found for MRF8S21120HSR3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MRF8S21120HSR3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
MRF21030SR3 Motorola Mobility LLC Check for Price S BAND, Si, N-CHANNEL, RF POWER, MOSFET, NI-400S, CASE 465F-04, 2 PIN MRF8S21120HSR3 vs MRF21030SR3
MRF21045SR3 Motorola Mobility LLC Check for Price S BAND, Si, N-CHANNEL, RF POWER, MOSFET, NI-400S, CASE 465F-04, 2 PIN MRF8S21120HSR3 vs MRF21045SR3
MRF21045LR3 Motorola Mobility LLC Check for Price S BAND, Si, N-CHANNEL, RF POWER, MOSFET, NI-400, CASE 465E-04, 2 PIN MRF8S21120HSR3 vs MRF21045LR3
MRF21045R3 Motorola Mobility LLC Check for Price S BAND, Si, N-CHANNEL, RF POWER, MOSFET, NI-400, CASE 465E-04, 2 PIN MRF8S21120HSR3 vs MRF21045R3
MRF21030LSR3 Motorola Mobility LLC Check for Price S BAND, Si, N-CHANNEL, RF POWER, MOSFET, NI-400S, CASE 465F-04, 2 PIN MRF8S21120HSR3 vs MRF21030LSR3
MRF21085SR3 Motorola Mobility LLC Check for Price S BAND, Si, N-CHANNEL, RF POWER, MOSFET, NI-780S, CASE 465A-06, 2 PIN MRF8S21120HSR3 vs MRF21085SR3
MRF21030R3 Motorola Mobility LLC Check for Price S BAND, Si, N-CHANNEL, RF POWER, MOSFET, NI-400, CASE 465E-04, 2 PIN MRF8S21120HSR3 vs MRF21030R3
MRF21045LSR3 Motorola Mobility LLC Check for Price S BAND, Si, N-CHANNEL, RF POWER, MOSFET, NI-400S, CASE 465F-04, 2 PIN MRF8S21120HSR3 vs MRF21045LSR3
MRF21030LR3 Motorola Mobility LLC Check for Price S BAND, Si, N-CHANNEL, RF POWER, MOSFET, NI-400, CASE 465E-04, 2 PIN MRF8S21120HSR3 vs MRF21030LR3
MRF7S21080HSR3 Freescale Semiconductor Check for Price Single W-CDMA Lateral N-Channel RF Power MOSFET, 2110-2170 MHz, 22 W Avg., 28 V MRF8S21120HSR3 vs MRF7S21080HSR3

MRF8S21120HSR3 Related Parts

MRF8S21120HSR3 Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the MRF8S21120HSR3 is -40°C to 125°C.

  • To optimize performance, ensure proper thermal management, use a low-loss PCB material, and follow the recommended layout and grounding guidelines. Additionally, optimize the input and output matching networks to minimize losses and ensure maximum power transfer.

  • The recommended PCB layout and grounding scheme involves using a multi-layer PCB with a solid ground plane, placing the device near the edge of the board, and using vias to connect the ground pins to the ground plane. A detailed layout and grounding scheme is provided in the application note AN1955.

  • Thermal management is critical for the MRF8S21120HSR3. Ensure good heat sinking by using a heat sink with a thermal resistance of less than 1°C/W, and apply a thermal interface material (TIM) between the device and heat sink. Additionally, ensure good airflow around the device and heat sink.

  • The recommended input and output matching networks for the MRF8S21120HSR3 depend on the specific application and frequency of operation. However, a general guideline is to use a low-pass filter topology for the input matching network and a π-network topology for the output matching network. The exact component values can be determined using simulation tools such as ADS or Genesys.