Part Details for MRF8S19140HR3 by Freescale Semiconductor
Results Overview of MRF8S19140HR3 by Freescale Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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MRF8S19140HR3 Information
MRF8S19140HR3 by Freescale Semiconductor is an RF Power Field-Effect Transistor.
RF Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for MRF8S19140HR3
MRF8S19140HR3 CAD Models
MRF8S19140HR3 Part Data Attributes
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MRF8S19140HR3
Freescale Semiconductor
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Datasheet
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MRF8S19140HR3
Freescale Semiconductor
L BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CASE 465-06, NI-780, 2 PIN
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | FREESCALE SEMICONDUCTOR INC | |
Package Description | FLANGE MOUNT, R-CDFM-F2 | |
Pin Count | 2 | |
Manufacturer Package Code | CASE 465-06 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.75 | |
Additional Feature | ESD PROTECTION | |
Case Connection | SOURCE | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 65 V | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Highest Frequency Band | L BAND | |
JESD-30 Code | R-CDFM-F2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 225 °C | |
Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 40 | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | SILICON |
Alternate Parts for MRF8S19140HR3
This table gives cross-reference parts and alternative options found for MRF8S19140HR3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MRF8S19140HR3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
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MRF8S18260HR6 | Freescale Semiconductor | Check for Price | 2 CHANNEL, L BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, NI-1230, CASE 375I-03, 8 PIN | MRF8S19140HR3 vs MRF8S18260HR6 |
MRF19045R3 | Motorola Mobility LLC | Check for Price | L BAND, Si, N-CHANNEL, RF POWER, MOSFET, NI-400, CASE 465E-04, 2 PIN | MRF8S19140HR3 vs MRF19045R3 |
MRF8S19140HSR3 | Freescale Semiconductor | Check for Price | Single CDMA, W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 1930-1990 MHz, 34 W Avg., 28 V | MRF8S19140HR3 vs MRF8S19140HSR3 |
MRF19045SR3 | Motorola Mobility LLC | Check for Price | L BAND, Si, N-CHANNEL, RF POWER, MOSFET, NI-400S, CASE 465F-04, 2 PIN | MRF8S19140HR3 vs MRF19045SR3 |
MRF6S21140HR3 | Freescale Semiconductor | Check for Price | 2 x W-CDMA, Lateral N-Channel RF Power MOSFET, 2110-2170 MHz, 30 W Avg., 28 V | MRF8S19140HR3 vs MRF6S21140HR3 |
MRF8S19260HSR6 | Freescale Semiconductor | Check for Price | 2 CHANNEL, L BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CASE 375J-02, NI-1230S-8, 8 PIN | MRF8S19140HR3 vs MRF8S19260HSR6 |
MRF8HP21130HR3 | Freescale Semiconductor | Check for Price | W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 2110-2170 MHz, 28 W Avg., 28 V | MRF8S19140HR3 vs MRF8HP21130HR3 |
MRF7S19100NBR1 | Freescale Semiconductor | Check for Price | Single W-CDMA Lateral N-Channel RF Power MOSFET, 1930-1990 MHz, 29 W Avg., 28 V | MRF8S19140HR3 vs MRF7S19100NBR1 |
MRF7S19170HSR3 | Freescale Semiconductor | Check for Price | Single W-CDMA Lateral N-Channel RF Power MOSFET, 1930-1990 MHz, 50 W Avg., 28 V | MRF8S19140HR3 vs MRF7S19170HSR3 |
MRF7S19080HSR3 | Freescale Semiconductor | Check for Price | Single W-CDMA Lateral N-Channel RF Power MOSFET, 1930-1990 MHz, 24 W Avg., 28 V | MRF8S19140HR3 vs MRF7S19080HSR3 |