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Transistors RF Power Field-Effect Transistors MRF8S18120HR3

MRF8S18120HR3
Description: GSM, GSM EDGE Lateral N-Channel RF Power MOSFET, 1805-1880 MHz, 72 W CW, 28 V

Overview of MRF8S18120HR3 by Freescale Semiconductor

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Consumer Electronics Audio and Video Systems

Price & Stock for MRF8S18120HR3 by Freescale Semiconductor

Part # Manufacturer Description Stock Price Buy
DISTI # 2156-MRF8S18120HR3-ND
DigiKey RF MOSFET LDMOS 28V NI780 Min Qty: 5 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT 354
In Stock
  • 5 $65.1500
$65.1500 Buy Now
Rochester Electronics RF L Band, N-Channel Power MOSFET RoHS: Compliant Status: Obsolete Min Qty: 1 354
  • 1 $65.7800
  • 25 $64.4600
  • 100 $61.8300
  • 500 $59.2000
  • 1,000 $55.9100
$55.9100 / $65.7800 Buy Now

CAD Models for MRF8S18120HR3 by Freescale Semiconductor
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Part Data Attributes for MRF8S18120HR3 by Freescale Semiconductor
Parametric Data

MRF8S18120HR3
Freescale Semiconductor
Buy Now
-
-
Pbfree Code
Yes
Rohs Code
Yes
Part Life Cycle Code
Transferred
Ihs Manufacturer
FREESCALE SEMICONDUCTOR INC
Package Description
ROHS COMPLIANT, NI-780, CASE 465-06, 2 PIN
Pin Count
2
Manufacturer Package Code
CASE 465-06
Reach Compliance Code
compliant
ECCN Code
EAR99
HTS Code
8541.29.00.75
Case Connection
SOURCE
Configuration
SINGLE
DS Breakdown Voltage-Min
65 V
FET Technology
METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band
L BAND
JESD-30 Code
R-CDFM-F2
Number of Elements
1
Number of Terminals
2
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
225 °C
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Peak Reflow Temperature (Cel)
NOT APPLICABLE
Polarity/Channel Type
N-CHANNEL
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Form
FLAT
Terminal Position
DUAL
Time@Peak Reflow Temperature-Max (s)
NOT APPLICABLE
Transistor Application
AMPLIFIER
Transistor Element Material
SILICON
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  1. MRF8S18120HR3
    Freescale Semiconductor
    GSM, GSM EDGE Lateral N-Channel RF Power MOSFET, 1805-1880 MHz, 72 W CW, 28 V
    VS

Alternate Parts for MRF8S18120HR3

This table gives cross-reference parts and alternative options found for MRF8S18120HR3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MRF8S18120HR3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
MRF8S21200HSR6 W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 2110-2170 MHz, 48 W Avg., 28 V Freescale Semiconductor MRF8S18120HR3 vs MRF8S21200HSR6
MRF7S19100NBR1 Single W-CDMA Lateral N-Channel RF Power MOSFET, 1930-1990 MHz, 29 W Avg., 28 V Freescale Semiconductor MRF8S18120HR3 vs MRF7S19100NBR1
MRF8S21140HR3 W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 2110-2170 MHz, 34 W Avg., 28 V Freescale Semiconductor MRF8S18120HR3 vs MRF8S21140HR3
MRF7S21150HSR3 Single W-CDMA Lateral N-Channel RF Power MOSFET, 2110-2170 MHz, 44 W Avg., 28 V Freescale Semiconductor MRF8S18120HR3 vs MRF7S21150HSR3
MRF8S21140HSR3 W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 2110-2170 MHz, 34 W Avg., 28 V Freescale Semiconductor MRF8S18120HR3 vs MRF8S21140HSR3
MRF18085AR3 L BAND, Si, N-CHANNEL, RF POWER, MOSFET, NI-780, CASE 465-06, 2 PIN Motorola Mobility LLC MRF8S18120HR3 vs MRF18085AR3
MRF6S19140HSR3 2 x N-CDMA Lateral N-Channel RF Power MOSFET, 1930-1990 MHz, 29 W Avg., 28 V Freescale Semiconductor MRF8S18120HR3 vs MRF6S19140HSR3
MRF8S18120HSR3 GSM, GSM EDGE Lateral N-Channel RF Power MOSFET, 1805-1880 MHz, 72 W CW, 28 V Freescale Semiconductor MRF8S18120HR3 vs MRF8S18120HSR3
MRF6S19060NR1 2 x N-CDMA Lateral N-Channel RF Power MOSFET, 1930-1990 MHz, 12 W Avg., 28 V Freescale Semiconductor MRF8S18120HR3 vs MRF6S19060NR1
MRF7S19080HR3 Single W-CDMA Lateral N-Channel RF Power MOSFET, 1930-1990 MHz, 24 W Avg., 28 V Freescale Semiconductor MRF8S18120HR3 vs MRF7S19080HR3

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