Part Details for MRF8S18120HR3 by Freescale Semiconductor
Results Overview of MRF8S18120HR3 by Freescale Semiconductor
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Audio and Video Systems
MRF8S18120HR3 Information
MRF8S18120HR3 by Freescale Semiconductor is an RF Power Field-Effect Transistor.
RF Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for MRF8S18120HR3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-MRF8S18120HR3-ND
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DigiKey | RF MOSFET LDMOS 28V NI780 Min Qty: 5 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
309 In Stock |
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$61.5600 | Buy Now |
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Rochester Electronics | RF L Band, N-Channel Power MOSFET RoHS: Compliant Status: Obsolete Min Qty: 1 | 309 |
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$47.3500 / $59.1900 | Buy Now |
Part Details for MRF8S18120HR3
MRF8S18120HR3 CAD Models
MRF8S18120HR3 Part Data Attributes
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MRF8S18120HR3
Freescale Semiconductor
Buy Now
Datasheet
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Compare Parts:
MRF8S18120HR3
Freescale Semiconductor
GSM, GSM EDGE Lateral N-Channel RF Power MOSFET, 1805-1880 MHz, 72 W CW, 28 V
Select a part to compare: |
| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | FREESCALE SEMICONDUCTOR INC | |
| Package Description | ROHS COMPLIANT, NI-780, CASE 465-06, 2 PIN | |
| Pin Count | 2 | |
| Manufacturer Package Code | CASE 465-06 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.75 | |
| Case Connection | SOURCE | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 65 V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Highest Frequency Band | L BAND | |
| JESD-30 Code | R-CDFM-F2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 225 °C | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT APPLICABLE | |
| Polarity/Channel Type | N-CHANNEL | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT APPLICABLE | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | SILICON |
Alternate Parts for MRF8S18120HR3
This table gives cross-reference parts and alternative options found for MRF8S18120HR3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MRF8S18120HR3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| MRF8HP21130HR3 | Freescale Semiconductor | Check for Price | W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 2110-2170 MHz, 28 W Avg., 28 V | MRF8S18120HR3 vs MRF8HP21130HR3 |
| MRF8P20140WHSR3 | Freescale Semiconductor | Check for Price | 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, NI-780S-4, CASE 465H-02, 4 PIN | MRF8S18120HR3 vs MRF8P20140WHSR3 |
| MRF8S21140HSR3 | Freescale Semiconductor | Check for Price | W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 2110-2170 MHz, 34 W Avg., 28 V | MRF8S18120HR3 vs MRF8S21140HSR3 |
| MRF6S19060NR1 | Freescale Semiconductor | Check for Price | 2 x N-CDMA Lateral N-Channel RF Power MOSFET, 1930-1990 MHz, 12 W Avg., 28 V | MRF8S18120HR3 vs MRF6S19060NR1 |
| MRF7S21150HSR3 | Freescale Semiconductor | Check for Price | Single W-CDMA Lateral N-Channel RF Power MOSFET, 2110-2170 MHz, 44 W Avg., 28 V | MRF8S18120HR3 vs MRF7S21150HSR3 |
| MRF8S19260HR6 | Freescale Semiconductor | Check for Price | Single W-CDMA Lateral N-Channel RF Power MOSFET, 1930-1990 MHz, 74 W Avg., 30 V | MRF8S18120HR3 vs MRF8S19260HR6 |
| MRF8S19140HSR3 | Freescale Semiconductor | Check for Price | Single CDMA, W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 1930-1990 MHz, 34 W Avg., 28 V | MRF8S18120HR3 vs MRF8S19140HSR3 |
| MRF8S21140HR3 | Freescale Semiconductor | Check for Price | W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 2110-2170 MHz, 34 W Avg., 28 V | MRF8S18120HR3 vs MRF8S21140HR3 |
| MRF7S19080HR3 | Freescale Semiconductor | Check for Price | Single W-CDMA Lateral N-Channel RF Power MOSFET, 1930-1990 MHz, 24 W Avg., 28 V | MRF8S18120HR3 vs MRF7S19080HR3 |
| MRF7S19170HSR3 | Freescale Semiconductor | Check for Price | Single W-CDMA Lateral N-Channel RF Power MOSFET, 1930-1990 MHz, 50 W Avg., 28 V | MRF8S18120HR3 vs MRF7S19170HSR3 |
MRF8S18120HR3 Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the MRF8S18120HR3 is -40°C to 125°C.
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To optimize the layout, keep the RF traces as short as possible, use a solid ground plane, and avoid crossing RF traces with other signals. Also, use a common mode choke or ferrite bead to filter out noise and EMI.
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The recommended PCB material is FR4 or Rogers 4350B, and the recommended thickness is 0.8 mm to 1.6 mm.
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Tuning the MRF8S18120HR3 involves adjusting the input and output matching networks to achieve the best possible impedance match. This can be done using a network analyzer and a tuning software such as Genesys or ADS.
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The maximum power handling capability of the MRF8S18120HR3 is 20 W, but it's recommended to derate the power handling to 15 W to ensure reliable operation.