MRF8372
Description: RF Small Signal Bipolar Transistor, 0.2A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, M-240, SO-8

Overview of MRF8372 by Advanced Power Technology

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  • Distributor Offerings: ( 0 listings )
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  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )

CAD Models for MRF8372 by Advanced Power Technology
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Part Data Attributes for MRF8372 by Advanced Power Technology

MRF8372
Advanced Power Technology
-
-
Rohs Code
No
Part Life Cycle Code
Transferred
Ihs Manufacturer
ADVANCED POWER TECHNOLOGY INC
Package Description
M-240, SO-8
Reach Compliance Code
unknown
ECCN Code
EAR99
Collector Current-Max (IC)
0.2 A
Collector-Base Capacitance-Max
2.75 pF
Collector-Emitter Voltage-Max
16 V
Configuration
SINGLE
DC Current Gain-Min (hFE)
30
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
JESD-30 Code
R-PDSO-G8
JESD-609 Code
e0
Number of Elements
1
Number of Terminals
8
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Polarity/Channel Type
NPN
Power Dissipation-Max (Abs)
2.2 W
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
Tin/Lead (Sn/Pb)
Terminal Form
GULL WING
Terminal Position
DUAL
Transistor Application
AMPLIFIER
Transistor Element Material
SILICON
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  1. MRF8372
    Advanced Power Technology
    RF Small Signal Bipolar Transistor, 0.2A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, M-240, SO-8
    VS

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