Part Details for MRF281ZR1 by Freescale Semiconductor
Results Overview of MRF281ZR1 by Freescale Semiconductor
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MRF281ZR1 Information
MRF281ZR1 by Freescale Semiconductor is an RF Power Field-Effect Transistor.
RF Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for MRF281ZR1
MRF281ZR1 CAD Models
MRF281ZR1 Part Data Attributes
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MRF281ZR1
Freescale Semiconductor
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Datasheet
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MRF281ZR1
Freescale Semiconductor
TRANSISTOR,MOSFET,N-CHANNEL,65V V(BR)DSS,SOT-391BVAR
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| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | FREESCALE SEMICONDUCTOR INC | |
| Package Description | SMALL OUTLINE, R-CDSO-G2 | |
| Pin Count | 2 | |
| Manufacturer Package Code | CASE 458C-03 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.75 | |
| Case Connection | SOURCE | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 65 V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Highest Frequency Band | S BAND | |
| JESD-30 Code | R-CDSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 200 °C | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 20 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | SILICON |
MRF281ZR1 Frequently Asked Questions (FAQ)
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The recommended PCB layout for the MRF281ZR1 involves keeping the RF traces as short as possible, using a solid ground plane, and placing the device near the antenna. Additionally, it's recommended to use a 4-layer PCB with a dedicated layer for the RF signal, a layer for the ground plane, and two layers for the digital signals.
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To optimize the MRF281ZR1 for low power consumption, it's recommended to use the lowest possible supply voltage, reduce the transmit power, and use the device's built-in power-saving features such as the 'Low Power Mode' and 'Shutdown Mode'. Additionally, optimizing the PCB layout and using a low-power microcontroller can also help reduce power consumption.
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The MRF281ZR1 has an operating temperature range of -40°C to +85°C, but it's recommended to operate the device within a temperature range of -20°C to +70°C for optimal performance and reliability.
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To troubleshoot common issues such as low gain or high noise, it's recommended to check the PCB layout, ensure that the device is properly soldered, and verify that the supply voltage is within the recommended range. Additionally, using a spectrum analyzer or a network analyzer can help identify issues with the RF signal.
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The recommended antenna design for the MRF281ZR1 involves using a quarter-wave monopole antenna or a dipole antenna with a length of around 1/4 wavelength at the operating frequency. The antenna should be matched to the device's output impedance and placed at a distance of at least 10 mm from the device.