Part Details for MRF151G by MACOM
Overview of MRF151G by MACOM
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (6 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for MRF151G
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
1465-1155-ND
|
DigiKey | RF MOSFET 50V 375-04 Min Qty: 1 Lead time: 14 Weeks Container: Tray |
68 In Stock |
|
$164.2050 / $175.3200 | Buy Now |
DISTI #
937-MRF151G
|
Mouser Electronics | RF MOSFET Transistors 5-175MHz 300Watts 50Volt Gain 14dB RoHS: Compliant | 0 |
|
Order Now | |
|
Quest Components | MOSFET Transistor, N-Channel, SOT-262A1 | 3 |
|
$153.0000 / $170.0000 | Buy Now |
DISTI #
MRF151G
|
Richardson RFPD | RF POWER TRANSISTOR RoHS: Compliant Min Qty: 1 | 284 |
|
$127.5000 / $134.2000 | Buy Now |
Part Details for MRF151G
MRF151G CAD Models
MRF151G Part Data Attributes:
|
MRF151G
MACOM
Buy Now
Datasheet
|
Compare Parts:
MRF151G
MACOM
RF Power Field-Effect Transistor, 2-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CASE 375-04, 4 PIN
|
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | M/A-COM TECHNOLOGY SOLUTIONS INC | |
Package Description | FLANGE MOUNT, R-CDFM-F4 | |
Pin Count | 4 | |
Manufacturer Package Code | CASE 375-04 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | MACOM | |
Additional Feature | HIGH RELIABILITY | |
Case Connection | SOURCE | |
Configuration | COMMON SOURCE, 2 ELEMENTS | |
DS Breakdown Voltage-Min | 125 V | |
Drain Current-Max (ID) | 40 A | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Highest Frequency Band | VERY HIGH FREQUENCY BAND | |
JESD-30 Code | R-CDFM-F4 | |
Number of Elements | 2 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 200 °C | |
Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 500 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | SILICON |
Alternate Parts for MRF151G
This table gives cross-reference parts and alternative options found for MRF151G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MRF151G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
934031850112 | TRANSISTOR 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CERAMIC PACKAGE-4, FET RF Power | NXP Semiconductors | MRF151G vs 934031850112 |
BLF278 | RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 0.385 X 0.850 INCH, FM-4 | Advanced Semiconductor Inc | MRF151G vs BLF278 |
MRF151G | 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CASE 375-04, 4 PIN | TE Connectivity | MRF151G vs MRF151G |
MRF151G | RF Power Field-Effect Transistor, 2-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 0.850 X 0.385 INCH, LFG, 4 PIN | Advanced Semiconductor Inc | MRF151G vs MRF151G |
BLF278 | 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, SOT-262A1, 4 PIN | NXP Semiconductors | MRF151G vs BLF278 |
MRF151G | RF Power Field-Effect Transistor, 2-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CASE 375-04, 4 PIN | Motorola Semiconductor Products | MRF151G vs MRF151G |