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Transistors RF Power Field-Effect Transistors MRF1511NT1

MRF1511NT1
Description: Lateral N-Channel Broadband RF Power MOSFET, 175 MHz, 8 W, 7.5 V

Overview of MRF1511NT1 by Freescale Semiconductor

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Price & Stock for MRF1511NT1 by Freescale Semiconductor

Part # Manufacturer Description Stock Price Buy
Bristol Electronics   733
RFQ
Quest Components MOSFET Transistor, N-Channel, SMT 586
  • 1 $15.0075
  • 172 $10.6720
  • 376 $10.0050
$10.0050 / $15.0075 Buy Now
Rochester Electronics RF Very High Frequency Band, N-Channel Power MOSFET RoHS: Compliant Status: Obsolete Min Qty: 1 3
  • 1 $8.9800
  • 25 $8.8000
  • 100 $8.4400
  • 500 $8.0900
  • 1,000 $7.6400
$7.6400 / $8.9800 Buy Now

CAD Models for MRF1511NT1 by Freescale Semiconductor
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Part Data Attributes for MRF1511NT1 by Freescale Semiconductor
Parametric Data

MRF1511NT1
Freescale Semiconductor
Buy Now
-
-
Pbfree Code
No
Rohs Code
Yes
Part Life Cycle Code
Transferred
Ihs Manufacturer
FREESCALE SEMICONDUCTOR INC
Package Description
ROHS COMPLIANT, PLASTIC, PLD-1.5, CASE 466-03, 4 PIN
Pin Count
4
Manufacturer Package Code
CASE 466-03
Reach Compliance Code
not_compliant
ECCN Code
EAR99
HTS Code
8541.29.00.75
Samacsys Manufacturer
NXP
Case Connection
SOURCE
Configuration
SINGLE
DS Breakdown Voltage-Min
40 V
Drain Current-Max (ID)
4 A
FET Technology
METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band
VERY HIGH FREQUENCY BAND
JESD-30 Code
R-PQSO-N4
JESD-609 Code
e3
Moisture Sensitivity Level
3
Number of Elements
1
Number of Terminals
4
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
62.5 W
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
Matte Tin (Sn)
Terminal Form
NO LEAD
Terminal Position
QUAD
Time@Peak Reflow Temperature-Max (s)
40
Transistor Application
AMPLIFIER
Transistor Element Material
SILICON
Want to compare parts?
  1. MRF1511NT1
    Freescale Semiconductor
    Lateral N-Channel Broadband RF Power MOSFET, 175 MHz, 8 W, 7.5 V
    VS

Alternate Parts for MRF1511NT1

This table gives cross-reference parts and alternative options found for MRF1511NT1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MRF1511NT1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
MRF1511T1 RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, POWER, PLASTIC, CASE 466-02, 4 PIN MACOM MRF1511NT1 vs MRF1511T1
MRF1511T1 VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, PLASTIC, PLD-1.5, CASE 466-03, 4 PIN Freescale Semiconductor MRF1511NT1 vs MRF1511T1
Part Number Description Manufacturer Compare
MRF1511T1 VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, PLASTIC, PLD-1.5, CASE 466-03, 4 PIN Freescale Semiconductor MRF1511NT1 vs MRF1511T1

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