Part Details for MRA0610-23 by Advanced Semiconductor Inc
Results Overview of MRA0610-23 by Advanced Semiconductor Inc
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- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Security and Surveillance
Environmental Monitoring
Internet of Things (IoT)
Space Technology
Smart Cities
Aerospace and Defense
Healthcare
Agriculture Technology
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Medical Imaging
Robotics and Drones
MRA0610-23 Information
MRA0610-23 by Advanced Semiconductor Inc is an RF Power Bipolar Transistor.
RF Power Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for MRA0610-23
MRA0610-23 CAD Models
MRA0610-23 Part Data Attributes
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MRA0610-23
Advanced Semiconductor Inc
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Datasheet
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MRA0610-23
Advanced Semiconductor Inc
RF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN, 0.320 INCH, FM-2
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| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ASI SEMICONDUCTOR INC | |
| Package Description | FLANGE MOUNT, R-CDFM-F2 | |
| Pin Count | 2 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Additional Feature | DIFFUSED BALLAST RESISTORS | |
| Case Connection | BASE | |
| Collector Current-Max (IC) | 3.5 A | |
| Collector-Base Capacitance-Max | 21 pF | |
| Configuration | SINGLE WITH BUILT-IN RESISTOR | |
| DC Current Gain-Min (hFE) | 10 | |
| Highest Frequency Band | L BAND | |
| JESD-30 Code | R-CDFM-F2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Temperature-Max | 200 °C | |
| Operating Temperature-Min | -65 °C | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | NPN | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | SILICON |