Part Details for MPS651 by Motorola Semiconductor Products
Overview of MPS651 by Motorola Semiconductor Products
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Education and Research
Internet of Things (IoT)
Computing and Data Storage
Aerospace and Defense
Healthcare
Telecommunications
Automotive
Price & Stock for MPS651
Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | Bipolar Junction Transistor, NPN Type, TO-92 | 6 |
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$0.1320 | Buy Now |
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Quest Components | Bipolar Junction Transistor, NPN Type, TO-92 | 1018 |
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$0.0990 / $0.3300 | Buy Now |
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Quest Components | Bipolar Junction Transistor, NPN Type, TO-92 | 199 |
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$0.8355 / $1.6710 | Buy Now |
Part Details for MPS651
MPS651 CAD Models
MPS651 Part Data Attributes:
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MPS651
Motorola Semiconductor Products
Buy Now
Datasheet
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Compare Parts:
MPS651
Motorola Semiconductor Products
Small Signal Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-226AA
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Rohs Code | No | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | MOTOROLA INC | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.75 | |
Collector Current-Max (IC) | 2 A | |
Collector-Emitter Voltage-Max | 60 V | |
Configuration | SINGLE | |
DC Current Gain-Min (hFE) | 40 | |
JEDEC-95 Code | TO-226AA | |
JESD-30 Code | O-PBCY-W3 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | ROUND | |
Package Style | CYLINDRICAL | |
Polarity/Channel Type | NPN | |
Power Dissipation Ambient-Max | 1.5 W | |
Power Dissipation-Max (Abs) | 0.625 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Tin/Lead (Sn/Pb) | |
Terminal Form | WIRE | |
Terminal Position | BOTTOM | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 75 MHz | |
VCEsat-Max | 0.5 V |