Datasheets
MPS2222 by:

Small Signal Bipolar Transistor, 0.6A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-226AA

Part Details for MPS2222 by Motorola Semiconductor Products

Overview of MPS2222 by Motorola Semiconductor Products

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Applications Consumer Electronics Audio and Video Systems

Price & Stock for MPS2222

Part # Distributor Description Stock Price Buy
Onlinecomponents.com General Purpose Transistor - NPN - 30V - 0.6A - 3-Pin - TO-92 Bulk. RoHS: Compliant 10436 In Stock
  • 1 $1.5300
  • 25 $1.2400
  • 100 $0.7600
  • 500 $0.3420
$0.3420 / $1.5300 Buy Now
Bristol Electronics   2794
RFQ
Quest Components Bipolar Junction Transistor, NPN Type, TO-92 99
  • 1 $0.3141
  • 17 $0.2618
  • 77 $0.2094
$0.2094 / $0.3141 Buy Now
Quest Components Bipolar Junction Transistor, NPN Type, TO-92 3990
  • 1 $0.5235
  • 765 $0.2094
  • 3,821 $0.1832
$0.1832 / $0.5235 Buy Now
Quest Components Bipolar Junction Transistor, NPN Type, TO-92 402
  • 1 $0.5235
  • 49 $0.3141
  • 192 $0.2618
$0.2618 / $0.5235 Buy Now
Component Electronics, Inc IN STOCK SHIP TODAY 13
  • 1 $0.3800
  • 100 $0.2900
  • 1,000 $0.2500
$0.2500 / $0.3800 Buy Now

Part Details for MPS2222

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MPS2222 Part Data Attributes

MPS2222 Motorola Semiconductor Products
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MPS2222 Motorola Semiconductor Products Small Signal Bipolar Transistor, 0.6A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-226AA
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer MOTOROLA INC
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.75
Collector Current-Max (IC) 0.6 A
Collector-Base Capacitance-Max 8 pF
Collector-Emitter Voltage-Max 30 V
Configuration SINGLE
DC Current Gain-Min (hFE) 30
JEDEC-95 Code TO-226AA
JESD-30 Code O-PBCY-W3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape ROUND
Package Style CYLINDRICAL
Polarity/Channel Type NPN
Power Dissipation Ambient-Max 1.5 W
Power Dissipation-Max (Abs) 0.625 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form WIRE
Terminal Position BOTTOM
Transistor Application AMPLIFIER
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 250 MHz
VCEsat-Max 1.6 V

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