Part Details for MP6K14TCR by ROHM Semiconductor
Overview of MP6K14TCR by ROHM Semiconductor
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Renewable Energy
Automotive
Price & Stock for MP6K14TCR
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
MP6K14TCR
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Avnet Americas | Transistor MOSFET Array Dual N-Channel 30V 8A 6-Pin MPT T/R - Tape and Reel (Alt: MP6K14TCR) Min Qty: 1000 Package Multiple: 1000 Container: Reel | 0 |
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RFQ |
Part Details for MP6K14TCR
MP6K14TCR CAD Models
MP6K14TCR Part Data Attributes
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MP6K14TCR
ROHM Semiconductor
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Datasheet
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MP6K14TCR
ROHM Semiconductor
Power Field-Effect Transistor, 8A I(D), 30V, 0.032ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MPT6, 6 PIN
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | End Of Life | |
Ihs Manufacturer | ROHM CO LTD | |
Package Description | SMALL OUTLINE, R-PDSO-F6 | |
Pin Count | 6 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Case Connection | DRAIN | |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 8 A | |
Drain-source On Resistance-Max | 0.032 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-F6 | |
JESD-609 Code | e2 | |
Number of Elements | 2 | |
Number of Terminals | 6 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 2 W | |
Pulsed Drain Current-Max (IDM) | 18 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Tin/Copper (Sn/Cu) | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |