Part Details for MMSF7N03HDR2 by Motorola Semiconductor Products
Overview of MMSF7N03HDR2 by Motorola Semiconductor Products
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Industrial Automation
Motor control systems
Price & Stock for MMSF7N03HDR2
Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | MOSFET Transistor, N-Channel, SO | 2163 |
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$0.2901 / $0.6963 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, SO | 1621 |
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$0.6081 / $1.7375 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, SO | 1511 |
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$0.4642 / $1.1605 | Buy Now |
Part Details for MMSF7N03HDR2
MMSF7N03HDR2 CAD Models
MMSF7N03HDR2 Part Data Attributes
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MMSF7N03HDR2
Motorola Semiconductor Products
Buy Now
Datasheet
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MMSF7N03HDR2
Motorola Semiconductor Products
Power Field-Effect Transistor, 8.2A I(D), 30V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIATURE, 751-05, SOP-8
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Rohs Code | No | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | MOTOROLA INC | |
Package Description | MINIATURE, 751-05, SOP-8 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Additional Feature | ULTRA LOW RESISTANCE | |
Avalanche Energy Rating (Eas) | 450 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 8.2 A | |
Drain-source On Resistance-Max | 0.028 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G8 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 2.5 W | |
Power Dissipation-Max (Abs) | 2.5 W | |
Pulsed Drain Current-Max (IDM) | 50 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Tin/Lead (Sn/Pb) | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |