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Transistors Power Field-Effect Transistors MMSF3P02HDR2

Transistors
MMSF3P02HDR2
Description: Power MOSFET -20V -5.6A 75 mOhm Single P-Channel SO-8, SOIC-8 Narrow Body, 2500-REEL

Overview of MMSF3P02HDR2 by onsemi

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for MMSF3P02HDR2 by onsemi

Part # Manufacturer Description Stock Price Buy
Bristol Electronics   2000
RFQ
Bristol Electronics   4201
RFQ
Bristol Electronics   Min Qty: 5 725
  • 5 $1.0125
  • 21 $0.6581
  • 77 $0.3797
  • 265 $0.3240
  • 572 $0.2835
$0.2835 / $1.0125 Buy Now
Bristol Electronics   1957
RFQ
Quest Components MOSFET Transistor, P-Channel, SO 5953
  • 1 $1.0707
  • 1,794 $0.3926
  • 3,822 $0.3747
$0.3747 / $1.0707 Buy Now
Quest Components MOSFET Transistor, P-Channel, SO 580
  • 1 $1.3500
  • 90 $0.4050
  • 495 $0.3510
$0.3510 / $1.3500 Buy Now
Quest Components MOSFET Transistor, P-Channel, SO 1600
  • 1 $1.7150
  • 234 $0.6860
  • 1,167 $0.6003
$0.6003 / $1.7150 Buy Now
Component Electronics, Inc IN STOCK SHIP TODAY 75
  • 1 $1.5400
  • 100 $1.1500
  • 1,000 $1.0000
$1.0000 / $1.5400 Buy Now

CAD Models for MMSF3P02HDR2 by onsemi
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Part Data Attributes for MMSF3P02HDR2 by onsemi
Parametric Data

MMSF3P02HDR2
onsemi
Buy Now
-
-
Pbfree Code
No
Part Life Cycle Code
Obsolete
Ihs Manufacturer
ON SEMICONDUCTOR
Part Package Code
SOIC-8 Narrow Body
Package Description
SMALL OUTLINE, R-PDSO-G8
Pin Count
8
Manufacturer Package Code
751-07
Reach Compliance Code
not_compliant
ECCN Code
EAR99
Samacsys Manufacturer
onsemi
Additional Feature
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas)
567 mJ
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
20 V
Drain Current-Max (ID)
5.6 A
Drain-source On Resistance-Max
0.075 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PDSO-G8
JESD-609 Code
e0
Moisture Sensitivity Level
1
Number of Elements
1
Number of Terminals
8
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
235
Polarity/Channel Type
P-CHANNEL
Power Dissipation-Max (Abs)
2.5 W
Pulsed Drain Current-Max (IDM)
30 A
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
Tin/Lead (Sn/Pb)
Terminal Form
GULL WING
Terminal Position
DUAL
Time@Peak Reflow Temperature-Max (s)
30
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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  1. MMSF3P02HDR2
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    Power MOSFET -20V -5.6A 75 mOhm Single P-Channel SO-8, SOIC-8 Narrow Body, 2500-REEL
    VS

Alternate Parts for MMSF3P02HDR2

This table gives cross-reference parts and alternative options found for MMSF3P02HDR2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MMSF3P02HDR2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
MMSF3P02HDR2G Power MOSFET -20V -5.6A 75 mOhm Single P-Channel SO-8, SOIC-8 Narrow Body, 2500-REEL onsemi MMSF3P02HDR2 vs MMSF3P02HDR2G
MMSF3P02HDR2 5.6A, 20V, 0.075ohm, P-CHANNEL, Si, POWER, MOSFET, CASE 751-07, SO-8 Rochester Electronics LLC MMSF3P02HDR2 vs MMSF3P02HDR2
Part Number Description Manufacturer Compare
IRF7202 Power Field-Effect Transistor, 2.5A I(D), 20V, 0.25ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET International Rectifier MMSF3P02HDR2 vs IRF7202
IRF7204TRPBF Power Field-Effect Transistor, 5.3A I(D), 20V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, Infineon Technologies AG MMSF3P02HDR2 vs IRF7204TRPBF
MMSF3P02HD 5.6A, 20V, 0.095ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, CASE 751-05, SOIC-8 Motorola Mobility LLC MMSF3P02HDR2 vs MMSF3P02HD
MMSF3P02HDR2G Power MOSFET -20V -5.6A 75 mOhm Single P-Channel SO-8, SOIC-8 Narrow Body, 2500-REEL onsemi MMSF3P02HDR2 vs MMSF3P02HDR2G
IRF7202TR Power Field-Effect Transistor, 2.5A I(D), 20V, 0.25ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET International Rectifier MMSF3P02HDR2 vs IRF7202TR
IRF7204TR Power Field-Effect Transistor, 5.3A I(D), 20V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET International Rectifier MMSF3P02HDR2 vs IRF7204TR

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