Part Details for MMIX1F160N30T by IXYS Corporation
Overview of MMIX1F160N30T by IXYS Corporation
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Healthcare
Medical Imaging
Price & Stock for MMIX1F160N30T
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
MMIX1F160N30T-ND
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DigiKey | MOSFET N-CH 300V 102A 24SMPD Min Qty: 300 Lead time: 27 Weeks Container: Tube | Temporarily Out of Stock |
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$35.5882 | Buy Now |
DISTI #
747-MMIX1F160N30T
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Mouser Electronics | MOSFET SMPD MOSFETs Power Device RoHS: Compliant | 0 |
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$36.5300 | Order Now |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 20 Package Multiple: 20 Container: Tube | 0Tube |
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$38.2300 | Buy Now |
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Onlinecomponents.com | RoHS: Compliant |
19 Partner Stock |
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$37.8500 / $44.5600 | Buy Now |
DISTI #
MMIX1F160N30T
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TME | Transistor: N-MOSFET, GigaMOS™, unipolar, 300V, 102A, Idm: 440A Min Qty: 1 | 20 |
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$38.2100 / $51.5300 | Buy Now |
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New Advantage Corporation | MOSFET DIS.102A 300V N-CH 24SMPD GIGAMOS RoHS: Compliant Min Qty: 1 Package Multiple: 1 | 16 |
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$70.6900 / $75.7400 | Buy Now |
Part Details for MMIX1F160N30T
MMIX1F160N30T CAD Models
MMIX1F160N30T Part Data Attributes:
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MMIX1F160N30T
IXYS Corporation
Buy Now
Datasheet
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Compare Parts:
MMIX1F160N30T
IXYS Corporation
Power Field-Effect Transistor, 102A I(D), 300V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC PACKAGE-21
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Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | IXYS CORP | |
Package Description | PLASTIC PACKAGE-21 | |
Pin Count | 21 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 3000 mJ | |
Case Connection | ISOLATED | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 300 V | |
Drain Current-Max (ID) | 102 A | |
Drain-source On Resistance-Max | 0.02 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G21 | |
Number of Elements | 1 | |
Number of Terminals | 21 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 570 W | |
Pulsed Drain Current-Max (IDM) | 440 A | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |