Datasheets
MMIX1F160N30T by:

Power Field-Effect Transistor, 102A I(D), 300V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC PACKAGE-21

Part Details for MMIX1F160N30T by IXYS Corporation

Overview of MMIX1F160N30T by IXYS Corporation

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Applications Healthcare Medical Imaging

Price & Stock for MMIX1F160N30T

Part # Distributor Description Stock Price Buy
DISTI # MMIX1F160N30T-ND
DigiKey MOSFET N-CH 300V 102A 24SMPD Min Qty: 300 Lead time: 27 Weeks Container: Tube Temporarily Out of Stock
  • 300 $35.5882
$35.5882 Buy Now
DISTI # 747-MMIX1F160N30T
Mouser Electronics MOSFET SMPD MOSFETs Power Device RoHS: Compliant 0
  • 300 $36.5300
$36.5300 Order Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 20 Package Multiple: 20 Container: Tube 0
Tube
  • 20 $38.2300
$38.2300 Buy Now
Onlinecomponents.com   RoHS: Compliant 19 Partner Stock
  • 1 $44.5600
  • 15 $42.7800
  • 35 $41.0600
  • 90 $39.4200
  • 300 $37.8500
$37.8500 / $44.5600 Buy Now
DISTI # MMIX1F160N30T
TME Transistor: N-MOSFET, GigaMOS™, unipolar, 300V, 102A, Idm: 440A Min Qty: 1 20
  • 1 $51.5300
  • 3 $45.5700
  • 10 $40.9200
  • 20 $38.2100
$38.2100 / $51.5300 Buy Now
New Advantage Corporation MOSFET DIS.102A 300V N-CH 24SMPD GIGAMOS RoHS: Compliant Min Qty: 1 Package Multiple: 1 16
  • 5 $75.7400
  • 16 $70.6900
$70.6900 / $75.7400 Buy Now

Part Details for MMIX1F160N30T

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MMIX1F160N30T Part Data Attributes:

MMIX1F160N30T IXYS Corporation
Buy Now Datasheet
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MMIX1F160N30T IXYS Corporation Power Field-Effect Transistor, 102A I(D), 300V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC PACKAGE-21
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer IXYS CORP
Package Description PLASTIC PACKAGE-21
Pin Count 21
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 3000 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 300 V
Drain Current-Max (ID) 102 A
Drain-source On Resistance-Max 0.02 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G21
Number of Elements 1
Number of Terminals 21
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 570 W
Pulsed Drain Current-Max (IDM) 440 A
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

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