Part Details for MMFT1N10ET1 by onsemi
Overview of MMFT1N10ET1 by onsemi
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (3 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (7 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for MMFT1N10ET1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
73AK6430
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Newark | Mmft1N10Et1, Single Mosfets |Onsemi MMFT1N10ET1 Min Qty: 1150 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$0.2860 / $0.3650 | Buy Now |
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DISTI #
2156-MMFT1N10ET1-ND
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DigiKey | SMALL SIGNAL N-CHANNEL MOSFET Min Qty: 952 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
12845 In Stock |
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$0.3200 | Buy Now |
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Rochester Electronics | Small Signal Field-Effect Transistor, 1A, 100V, N-Channel MOSFET, TO-261AA ' RoHS: Not Compliant Status: Obsolete Min Qty: 1 | 12845 |
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$0.2707 / $0.3185 | Buy Now |
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ComSIT USA | N-CHANNEL ENHANCEMENT MODE SILICON GATE TMOS E-FET MEDIUM POWER FIELD EFFECT TRANSISTOR Small Signal Field-Effect Transistor, 1A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA RoHS: Not Compliant | Europe - 10225 |
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RFQ | |
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Sense Electronic Company Limited | SOT223 | 960 |
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RFQ |
Part Details for MMFT1N10ET1
MMFT1N10ET1 CAD Models
MMFT1N10ET1 Part Data Attributes
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MMFT1N10ET1
onsemi
Buy Now
Datasheet
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Compare Parts:
MMFT1N10ET1
onsemi
1000mA, 100V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ONSEMI | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Additional Feature | AVALANCHE RATED | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 1 A | |
| Drain-source On Resistance-Max | 0.25 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-261AA | |
| JESD-30 Code | R-PDSO-G4 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 235 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 0.8 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for MMFT1N10ET1
This table gives cross-reference parts and alternative options found for MMFT1N10ET1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MMFT1N10ET1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| MMFT1N10ET3 | 1000mA, 100V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA | onsemi | MMFT1N10ET1 vs MMFT1N10ET3 |
| MMFT1N10ET3 | 1000mA, 100V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA | Motorola Mobility LLC | MMFT1N10ET1 vs MMFT1N10ET3 |
| MMFT1N10E | Small Signal Field-Effect Transistor, 1A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, CASE 318E-04, 4 PIN | Motorola Semiconductor Products | MMFT1N10ET1 vs MMFT1N10E |