Part Details for MMDF4N01HDR2 by onsemi
Overview of MMDF4N01HDR2 by onsemi
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for MMDF4N01HDR2
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
73AK6424
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Newark | Mmdf4N01Hdr2, Single Mosfets |Onsemi MMDF4N01HDR2 Min Qty: 1690 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$0.1940 / $0.2470 | Buy Now |
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Bristol Electronics | 130 |
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RFQ | ||
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Quest Components | 4 A, 12 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET | 104 |
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$0.5075 / $1.0150 | Buy Now |
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Rochester Electronics | Trans MOSFET N-CH 20V 5.2A 8-Pin SOIC N T/R ' RoHS: Not Compliant Status: Obsolete Min Qty: 1 | 117500 |
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$0.1837 / $0.2161 | Buy Now |
Part Details for MMDF4N01HDR2
MMDF4N01HDR2 CAD Models
MMDF4N01HDR2 Part Data Attributes:
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MMDF4N01HDR2
onsemi
Buy Now
Datasheet
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Compare Parts:
MMDF4N01HDR2
onsemi
5.2A, 20V, 0.045ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, SO-8
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | SOT | |
| Package Description | SO-8 | |
| Pin Count | 8 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Factory Lead Time | 4 Weeks | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 5.2 A | |
| Drain-source On Resistance-Max | 0.045 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e0 | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 235 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 2 W | |
| Pulsed Drain Current-Max (IDM) | 48 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for MMDF4N01HDR2
This table gives cross-reference parts and alternative options found for MMDF4N01HDR2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MMDF4N01HDR2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| AF9926NSLA | Power Field-Effect Transistor, 6A I(D), 20V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8 | Integrated Circuit Technology Corp | MMDF4N01HDR2 vs AF9926NSLA |
| LDN9926ET1G | Power Field-Effect Transistor, 6A I(D), 20V, 0.029ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SOP-8 | LRC Leshan Radio Co Ltd | MMDF4N01HDR2 vs LDN9926ET1G |
| FDS9926AF011 | Power Field-Effect Transistor, 6.5A I(D), 20V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 | Fairchild Semiconductor Corporation | MMDF4N01HDR2 vs FDS9926AF011 |
| APM9926KC-TRG | Power Field-Effect Transistor, 6A I(D), 20V, 0.032ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, GREEN, SOP-8 | American Power Devices Inc | MMDF4N01HDR2 vs APM9926KC-TRG |
| FDS9926AD84Z | Power Field-Effect Transistor, 6.5A I(D), 20V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 | Fairchild Semiconductor Corporation | MMDF4N01HDR2 vs FDS9926AD84Z |
| SI9926DY_NL | Power Field-Effect Transistor, 6.5A I(D), 20V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SOP-8 | Fairchild Semiconductor Corporation | MMDF4N01HDR2 vs SI9926DY_NL |
| FDS9926AL86Z | Power Field-Effect Transistor, 6.5A I(D), 20V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 | Fairchild Semiconductor Corporation | MMDF4N01HDR2 vs FDS9926AL86Z |
| WTM4248W | Power Field-Effect Transistor, 6A I(D), 20V, 0.028ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SOP-8 | WEITRON INTERNATIONAL CO., LTD. | MMDF4N01HDR2 vs WTM4248W |
| IRF7530TRPBF-EL | Power Field-Effect Transistor, 5.4A I(D), 20V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8 | Infineon Technologies AG | MMDF4N01HDR2 vs IRF7530TRPBF-EL |
| SI9926DYL86Z | Power Field-Effect Transistor, 6.5A I(D), 20V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 | Fairchild Semiconductor Corporation | MMDF4N01HDR2 vs SI9926DYL86Z |