Part Details for MMDF3N03HDR2 by onsemi
Results Overview of MMDF3N03HDR2 by onsemi
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (1 replacement)
- Tariff Estimator: (Available) NEW
- Number of Functional Equivalents: (10 options)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
MMDF3N03HDR2 Information
MMDF3N03HDR2 by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for MMDF3N03HDR2
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 794 |
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RFQ | ||
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Quest Components | TRANSISTOR,MOSFET,MATCHED PAIR,N-CHANNEL,30V V(BR)DSS,4.1A I(D),SO | 1440 |
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$0.4950 / $1.3500 | Buy Now |
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Quest Components | TRANSISTOR,MOSFET,MATCHED PAIR,N-CHANNEL,30V V(BR)DSS,4.1A I(D),SO | 635 |
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$1.5000 / $4.0000 | Buy Now |
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Quest Components | TRANSISTOR,MOSFET,MATCHED PAIR,N-CHANNEL,30V V(BR)DSS,4.1A I(D),SO | 40 |
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$1.3500 / $2.2500 | Buy Now |
US Tariff Estimator: MMDF3N03HDR2 by onsemi
Calculations from this tool are estimations only for imports into the United States. Please refer to the distributor or manufacturer and reference official US government sources and authorities to verify any final purchase costs.
Part Details for MMDF3N03HDR2
MMDF3N03HDR2 Part Data Attributes
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MMDF3N03HDR2
onsemi
Buy Now
Datasheet
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Compare Parts:
MMDF3N03HDR2
onsemi
Power Field-Effect Transistor, 4.1A I(D), 30V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Part Package Code | SOT | |
| Package Description | Sop-8 | |
| Pin Count | 8 | |
| Manufacturer Package Code | CASE 751-07 | |
| Reach Compliance Code | Not Compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Additional Feature | Avalanche Rated, Logic Level Compatible, Ultra-Low Resistance | |
| Avalanche Energy Rating (Eas) | 324 Mj | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 4.1 A | |
| Drain-source On Resistance-Max | 0.07 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e0 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Small Outline | |
| Peak Reflow Temperature (Cel) | 235 | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 2 W | |
| Pulsed Drain Current-Max (IDM) | 40 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | Yes | |
| Terminal Finish | Tin Lead | |
| Terminal Form | Gull Wing | |
| Terminal Position | Dual | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
Alternate Parts for MMDF3N03HDR2
This table gives cross-reference parts and alternative options found for MMDF3N03HDR2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MMDF3N03HDR2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| MMDF3N03HDR2 | Rochester Electronics LLC | Check for Price | 4.1A, 30V, 0.07ohm, N-CHANNEL, Si, POWER, MOSFET, MINIATURE, CASE 751-07, SOP-8 | MMDF3N03HDR2 vs MMDF3N03HDR2 |
MMDF3N03HDR2 Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the MMDF3N03HDR2 is -55°C to 150°C, as specified in the datasheet. However, it's recommended to operate the device within a temperature range of -40°C to 125°C for optimal performance and reliability.
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To ensure proper biasing, make sure to follow the recommended voltage and current ratings specified in the datasheet. Additionally, ensure that the input and output pins are properly terminated, and that the device is operated within the recommended operating conditions.
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For optimal thermal management, it's recommended to use a thermal pad or heat sink on the device, and to ensure good thermal conductivity between the device and the PCB. A recommended PCB layout is to use a 4-layer board with a solid ground plane, and to keep the high-frequency signals away from the device's pins.
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To handle ESD protection, it's recommended to use ESD protection devices such as TVS diodes or ESD arrays on the input and output pins of the MMDF3N03HDR2. Additionally, ensure that the device is handled and stored in an ESD-safe environment.
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For testing and measurement, it's recommended to use a high-frequency signal generator and a spectrum analyzer to measure the device's frequency response and noise figure. Additionally, use a DC power supply to measure the device's DC characteristics, and ensure that the test setup is properly calibrated and configured.