Part Details for MMDF2C02E by Motorola Mobility LLC
Overview of MMDF2C02E by Motorola Mobility LLC
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for MMDF2C02E
MMDF2C02E CAD Models
MMDF2C02E Part Data Attributes:
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MMDF2C02E
Motorola Mobility LLC
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Datasheet
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MMDF2C02E
Motorola Mobility LLC
2A, 20V, 0.2ohm, 2 CHANNEL,N AND P-CHANNEL, Si, POWER, MOSFET, CASE 751-05, SOIC-8
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | MOTOROLA INC | |
Part Package Code | SOT | |
Package Description | SMALL OUTLINE, R-PDSO-G8 | |
Pin Count | 8 | |
Manufacturer Package Code | CASE 751-05 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 245 mJ | |
Configuration | SEPARATE, 2 ELEMENTS | |
DS Breakdown Voltage-Min | 20 V | |
Drain Current-Max (ID) | 2 A | |
Drain-source On Resistance-Max | 0.2 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G8 | |
JESD-609 Code | e0 | |
Number of Elements | 2 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL AND P-CHANNEL | |
Power Dissipation-Max (Abs) | 1.5 W | |
Pulsed Drain Current-Max (IDM) | 18 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | TIN LEAD | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for MMDF2C02E
This table gives cross-reference parts and alternative options found for MMDF2C02E. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MMDF2C02E, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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HAT3004R | Power Field-Effect Transistor, 0.15ohm, N-Channel and P-Channel, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 | Hitachi Ltd | MMDF2C02E vs HAT3004R |
IRF7105PBF | Power Field-Effect Transistor, 3.5A I(D), 25V, 0.1ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 | Infineon Technologies AG | MMDF2C02E vs IRF7105PBF |
IRF9952QPBF | Power Field-Effect Transistor, 3.5A I(D), 30V, 0.1ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SOP-8 | International Rectifier | MMDF2C02E vs IRF9952QPBF |
IRF7106 | Power Field-Effect Transistor, 3A I(D), 20V, 0.125ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 | International Rectifier | MMDF2C02E vs IRF7106 |
IRF7509TR | Small Signal Field-Effect Transistor, 2.7A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8 | International Rectifier | MMDF2C02E vs IRF7509TR |
IRF7509PBF | Small Signal Field-Effect Transistor, 2.7A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MICRO-8, SOIC-8 | International Rectifier | MMDF2C02E vs IRF7509PBF |
NTMD2C02R2SG | 5.2A, 20V, 0.043ohm, 2 CHANNEL,N AND P-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 751-07, SOIC-8 | Rochester Electronics LLC | MMDF2C02E vs NTMD2C02R2SG |
IRF7105PBF | Power Field-Effect Transistor, 3.5A I(D), 25V, 0.1ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 | International Rectifier | MMDF2C02E vs IRF7105PBF |
IRF7317PBF | Power Field-Effect Transistor, 6.6A I(D), 20V, 0.029ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 | International Rectifier | MMDF2C02E vs IRF7317PBF |
IRF9952TRPBF | Power Field-Effect Transistor, 3.5A I(D), 30V, 0.1ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, | International Rectifier | MMDF2C02E vs IRF9952TRPBF |