Datasheets
MMDF2C01HDR2 by:

5.2A, 20V, 0.045ohm, 2 CHANNEL,N AND P-CHANNEL, Si, POWER, MOSFET, SO-8

Part Details for MMDF2C01HDR2 by onsemi

Overview of MMDF2C01HDR2 by onsemi

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Price & Stock for MMDF2C01HDR2

Part # Distributor Description Stock Price Buy
Quest Components MOSFET Transistor, Pair, Complementary, SO 9
  • 1 $0.9000
  • 7 $0.7500
$0.7500 / $0.9000 Buy Now
Quest Components MOSFET Transistor, Pair, Complementary, SO 464
  • 1 $2.4400
  • 42 $1.2200
  • 165 $0.9760
$0.9760 / $2.4400 Buy Now

Part Details for MMDF2C01HDR2

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MMDF2C01HDR2 Part Data Attributes:

MMDF2C01HDR2 onsemi
Buy Now Datasheet
Compare Parts:
MMDF2C01HDR2 onsemi 5.2A, 20V, 0.045ohm, 2 CHANNEL,N AND P-CHANNEL, Si, POWER, MOSFET, SO-8
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer ON SEMICONDUCTOR
Part Package Code SOT
Package Description SO-8
Pin Count 8
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 5.2 A
Drain-source On Resistance-Max 0.045 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
JESD-609 Code e0
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 235
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Power Dissipation-Max (Abs) 2 W
Pulsed Drain Current-Max (IDM) 48 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for MMDF2C01HDR2

This table gives cross-reference parts and alternative options found for MMDF2C01HDR2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MMDF2C01HDR2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
MMDF2C01HD Power Field-Effect Transistor, 5.2A I(D), 20V, 0.055ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET Motorola Semiconductor Products MMDF2C01HDR2 vs MMDF2C01HD
Part Number Description Manufacturer Compare
IRF7307 Power Field-Effect Transistor, 4.3A I(D), 20V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, Infineon Technologies AG MMDF2C01HDR2 vs IRF7307
IRF7307TR Power Field-Effect Transistor, 4.3A I(D), 20V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET International Rectifier MMDF2C01HDR2 vs IRF7307TR
MMDF2C01HD Power Field-Effect Transistor, 5.2A I(D), 20V, 0.055ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET Motorola Semiconductor Products MMDF2C01HDR2 vs MMDF2C01HD
IRF7307QPBF Power Field-Effect Transistor, 5.2A I(D), 20V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SOP-8 International Rectifier MMDF2C01HDR2 vs IRF7307QPBF
IRF7307TRPBF Power Field-Effect Transistor, 5.2A I(D), 20V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 Infineon Technologies AG MMDF2C01HDR2 vs IRF7307TRPBF
IRF7307PBF Power Field-Effect Transistor, 5.2A I(D), 20V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 Infineon Technologies AG MMDF2C01HDR2 vs IRF7307PBF
NDS8928 Power Field-Effect Transistor, 5.5A I(D), 20V, 0.035ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 Fairchild Semiconductor Corporation MMDF2C01HDR2 vs NDS8928

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