MMBV105GL
Description: UHF BAND, 30V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE, TO-236AB

Overview of MMBV105GL by Motorola Mobility LLC

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Where used in Applications: Aerospace and Defense

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Part Data Attributes for MMBV105GL by Motorola Mobility LLC

MMBV105GL
Motorola Mobility LLC
-
-
Pbfree Code
No
Rohs Code
No
Part Life Cycle Code
Obsolete
Ihs Manufacturer
MOTOROLA INC
Package Description
R-PDSO-G3
Reach Compliance Code
unknown
ECCN Code
EAR99
HTS Code
8541.10.00.80
Breakdown Voltage-Min
30 V
Configuration
SINGLE
Diode Cap Tolerance
30.23%
Diode Capacitance Ratio-Min
4
Diode Capacitance-Nom
23 pF
Diode Element Material
SILICON
Diode Type
VARIABLE CAPACITANCE DIODE
Frequency Band
ULTRA HIGH FREQUENCY
JEDEC-95 Code
TO-236AB
JESD-30 Code
R-PDSO-G3
JESD-609 Code
e0
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Power Dissipation-Max
0.225 W
Qualification Status
Not Qualified
Quality Factor-Min
200
Rep Pk Reverse Voltage-Max
30 V
Surface Mount
YES
Terminal Finish
TIN LEAD
Terminal Form
GULL WING
Terminal Position
DUAL
Variable Capacitance Diode Classification
HYPERABRUPT
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  1. MMBV105GL
    Motorola Mobility LLC
    UHF BAND, 30V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE, TO-236AB
    VS

Alternate Parts for MMBV105GL

This table gives cross-reference parts and alternative options found for MMBV105GL. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MMBV105GL, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
MMBV105GLT1G Tuning Diode 30 V C3/C25 = 4.0-6.5, SOT-23 (TO-236) 3 LEAD, 3000-REEL onsemi MMBV105GL vs MMBV105GLT1G
MMBV105GLT1 Tuning Diode 30 V C3/C25 = 4.0-6.5, SOT-23 (TO-236) 3 LEAD, 3000-REEL onsemi MMBV105GL vs MMBV105GLT1
MMBV105GL Variable Capacitance Diode, Ultra High Frequency, 23pF C(T), 30V, Silicon, Hyperabrupt, TO-236AB Motorola Semiconductor Products MMBV105GL vs MMBV105GL
MMBV105GLT1 Variable Capacitance Diode LRC Leshan Radio Co Ltd MMBV105GL vs MMBV105GLT1
Part Number Description Manufacturer Compare
MMBV105GLT1 Tuning Diode 30 V C3/C25 = 4.0-6.5, SOT-23 (TO-236) 3 LEAD, 3000-REEL onsemi MMBV105GL vs MMBV105GLT1
ZC829B Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 8.2pF C(T), 25V, Silicon, Hyperabrupt Diodes Incorporated MMBV105GL vs ZC829B
MA2Z368 Variable Capacitance Diode, Ultra High Frequency to KA Band, 4.6pF C(T), 32V, Silicon, SC-76A, 2 PIN Panasonic Electronic Components MMBV105GL vs MA2Z368
MMBV105GLT3 UHF BAND, 30V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE, PLASTIC, CASE 318-08, 3 PIN Motorola Mobility LLC MMBV105GL vs MMBV105GLT3
1T365 Variable Capacitance Diode, 0.7pF C(T), 30V, Silicon, M-235, 2 PIN Sony Semiconductor MMBV105GL vs 1T365
UZMV829B Variable Capacitance Diode, 8.2pF C(T), 25V, Silicon Diodes Incorporated MMBV105GL vs UZMV829B
UZC829B Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 8.2pF C(T), 25V, Silicon, Hyperabrupt Diodes Incorporated MMBV105GL vs UZC829B
MA379 Variable Capacitance Diode, Ultra High Frequency, 6.17pF C(T), 32V, Silicon, MINI PACKAGE-2 Panasonic Electronic Components MMBV105GL vs MA379
ZMV829BTA Variable Capacitance Diode, 8.2pF C(T), 25V, Silicon, Hyperabrupt, MINIATURE PACKAGE-2 Diodes Incorporated MMBV105GL vs ZMV829BTA
ZMV829BTC Variable Capacitance Diode, 8.2pF C(T), 25V, Silicon, Hyperabrupt, MINIATURE PACKAGE-2 Diodes Incorporated MMBV105GL vs ZMV829BTC

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