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MMBTH10RG by:

RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, SOT-23, 3 PIN

Part Details for MMBTH10RG by Fairchild Semiconductor Corporation

Overview of MMBTH10RG by Fairchild Semiconductor Corporation

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Price & Stock for MMBTH10RG

Part # Distributor Description Stock Price Buy
DISTI # 2156-MMBTH10RG-ND
DigiKey RF 0.05A, ULTRA HIGH FREQ BAND Min Qty: 4438 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT 135330
In Stock
  • 4,438 $0.0700
$0.0700 Buy Now
Rochester Electronics MMBTH10RG - RF Small Signal Bipolar Transistor, 0.05A, Ultra High Frequency Band, NPN RoHS: Compliant Status: Obsolete Min Qty: 1 378330
  • 1 $0.0650
  • 25 $0.0637
  • 100 $0.0611
  • 500 $0.0585
  • 1,000 $0.0553
$0.0553 / $0.0650 Buy Now

Part Details for MMBTH10RG

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MMBTH10RG Part Data Attributes

MMBTH10RG Fairchild Semiconductor Corporation
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MMBTH10RG Fairchild Semiconductor Corporation RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, SOT-23, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code SOT-23
Package Description SOT-23, 3 PIN
Pin Count 3
Manufacturer Package Code 3LD, SOT23, JEDEC TO-236, LOW PROFILE
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.21.00.95
Additional Feature LOW NOISE
Collector Current-Max (IC) 0.05 A
Collector-Base Capacitance-Max 0.6 pF
Collector-Emitter Voltage-Max 40 V
Configuration SINGLE
DC Current Gain-Min (hFE) 50
Highest Frequency Band ULTRA HIGH FREQUENCY BAND
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 0.225 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application AMPLIFIER
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 450 MHz

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