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NPN Bipolar Transistor hFE ≥ 60; fT ≥ 650 MHz, SOT-23 (TO-236) 3 LEAD, 10000-REEL
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
16M4498
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Newark | Bipolar Transistor, Npn, 25V, Full Reel, Transistor Polarity:Npn, Collector Emitter Voltage Max:25V, Transition Frequency:650Mhz, Power Dissipation:225Mw, Continuous Collector Current:1Ma, No. Of Pins:3Pins, Product Range:- Rohs Compliant: Yes |Onsemi MMBTH10LT3G RoHS: Compliant Min Qty: 10000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.0310 / $0.0440 | Buy Now |
DISTI #
MMBTH10LT3GOSCT-ND
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DigiKey | RF TRANS NPN 25V 650MHZ SOT23-3 Min Qty: 1 Lead time: 29 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
39485 In Stock |
|
$0.0267 / $0.2700 | Buy Now |
DISTI #
MMBTH10LT3G
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Avnet Americas | Trans GP BJT NPN 25V 3-Pin SOT-23 T/R - Tape and Reel (Alt: MMBTH10LT3G) RoHS: Compliant Min Qty: 30000 Package Multiple: 10000 Lead time: 29 Weeks, 0 Days Container: Reel | 0 |
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$0.0272 / $0.0305 | Buy Now |
DISTI #
863-MMBTH10LT3G
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Mouser Electronics | Bipolar Transistors - BJT SS VHF XSTR NPN 25V RoHS: Compliant | 19800 |
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$0.0270 / $0.2700 | Buy Now |
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Onlinecomponents.com | ON Semi MMBTH10LT3G NPN RF Bipolar Transistor, 0.5 A, 25 V, 3-Pin SOT-23 | 0 |
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$0.0244 / $0.0282 | Buy Now |
DISTI #
MMBTH10LT3G
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Avnet Silica | Trans GP BJT NPN 25V 3-Pin SOT-23 T/R (Alt: MMBTH10LT3G) RoHS: Compliant Min Qty: 10000 Package Multiple: 10000 Lead time: 30 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
DISTI #
MMBTH10LT3G
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EBV Elektronik | Trans GP BJT NPN 25V 3-Pin SOT-23 T/R (Alt: MMBTH10LT3G) RoHS: Compliant Min Qty: 10000 Package Multiple: 10000 Lead time: 31 Weeks, 0 Days | EBV - 0 |
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Buy Now |
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MMBTH10LT3G
onsemi
Buy Now
Datasheet
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Compare Parts:
MMBTH10LT3G
onsemi
NPN Bipolar Transistor hFE ≥ 60; fT ≥ 650 MHz, SOT-23 (TO-236) 3 LEAD, 10000-REEL
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Pbfree Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ONSEMI | |
Part Package Code | SOT-23 (TO-236) 3 LEAD | |
Package Description | CASE 318-08, 3 PIN | |
Pin Count | 3 | |
Manufacturer Package Code | 318-08 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 29 Weeks | |
Samacsys Manufacturer | onsemi | |
Collector-Base Capacitance-Max | 0.7 pF | |
Collector-Emitter Voltage-Max | 25 V | |
Configuration | SINGLE | |
DC Current Gain-Min (hFE) | 60 | |
Highest Frequency Band | ULTRA HIGH FREQUENCY BAND | |
JEDEC-95 Code | TO-236 | |
JESD-30 Code | R-PDSO-G3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | NPN | |
Power Dissipation-Max (Abs) | 0.3 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 650 MHz |
This table gives cross-reference parts and alternative options found for MMBTH10LT3G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MMBTH10LT3G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
MMBTH10LT1 | NPN Bipolar Transistor, SOT-23 (TO-236) 3 LEAD, 3000-REEL | onsemi | MMBTH10LT3G vs MMBTH10LT1 |
MMBT3906 | Transistor, | Vishay Intertechnologies | MMBTH10LT3G vs MMBT3906 |
MMBTH10LT3 | RF Small Signal Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-236AB, PLASTIC, CASE 318-08, 3 PIN | Motorola Semiconductor Products | MMBTH10LT3G vs MMBTH10LT3 |
MMBTH10_R2_00001 | RF Small Signal Bipolar Transistor | PanJit Semiconductor | MMBTH10LT3G vs MMBTH10_R2_00001 |
MMBTH10 | RF Small Signal Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, ROHS COMPLIANT, PLASTIC PACKAGE-3 | PanJit Semiconductor | MMBTH10LT3G vs MMBTH10 |
MMBTH10_R1_00001 | RF Small Signal Bipolar Transistor | PanJit Semiconductor | MMBTH10LT3G vs MMBTH10_R1_00001 |
MMBTH10L99Z | RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, | Fairchild Semiconductor Corporation | MMBTH10LT3G vs MMBTH10L99Z |
MMBTH10 | RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, | Lite-On Semiconductor Corporation | MMBTH10LT3G vs MMBTH10 |
MMBTH10-R1-10001 | Transistor | PanJit Semiconductor | MMBTH10LT3G vs MMBTH10-R1-10001 |
BFU520W | TRANSISTOR RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal | NXP Semiconductors | MMBTH10LT3G vs BFU520W |