Part Details for MMBT5551 by Galaxy Microelectronics
Overview of MMBT5551 by Galaxy Microelectronics
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (3 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (8 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for MMBT5551
MMBT5551 CAD Models
MMBT5551 Part Data Attributes
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MMBT5551
Galaxy Microelectronics
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Datasheet
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MMBT5551
Galaxy Microelectronics
General Purpose NPN Bipolar Transistor; Polarity: NPN; V(BR)CEO Min (V): 160V; IC (A): 0.6A; HFE Min: 80; HFE Max: 250; VCE (V): 5V; IC (mA): 10mA; VCE(SAT) (V): 0.2V; IC (mA)1: 50mA; IB (mA): 5mA; FT Min (MHz): 100 MHz; PTM Max (W): 0.3W; Package: SOT-23; package_code: SOT-23; mfr_package_code: SOT-23
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD | |
Part Package Code | SOT-23 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Collector Current-Max (IC) | 0.6 A | |
Collector-Emitter Voltage-Max | 160 V | |
Configuration | SINGLE | |
DC Current Gain-Min (hFE) | 30 | |
JESD-30 Code | R-PDSO-G3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | NPN | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 100 MHz |
Alternate Parts for MMBT5551
This table gives cross-reference parts and alternative options found for MMBT5551. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MMBT5551, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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MMBT5551 | Transistor | Shanghai Lunsure Electronic Technology Co Ltd | MMBT5551 vs MMBT5551 |
MMBT5551 | Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, | Yangzhou Yangjie Electronics Co Ltd | MMBT5551 vs MMBT5551 |
MMBT5551 | Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN | Infinex | MMBT5551 vs MMBT5551 |