Datasheets
MMBT5551 by:

General Purpose NPN Bipolar Transistor; Polarity: NPN; V(BR)CEO Min (V): 160V; IC (A): 0.6A; HFE Min: 80; HFE Max: 250; VCE (V): 5V; IC (mA): 10mA; VCE(SAT) (V): 0.2V; IC (mA)1: 50mA; IB (mA): 5mA; FT Min (MHz): 100 MHz; PTM Max (W): 0.3W; Package: SOT-23; package_code: SOT-23; mfr_package_code: SOT-23

Part Details for MMBT5551 by Galaxy Microelectronics

Overview of MMBT5551 by Galaxy Microelectronics

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Applications Consumer Electronics Education and Research Industrial Automation Audio and Video Systems Electronic Manufacturing

Part Details for MMBT5551

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MMBT5551 Part Data Attributes

MMBT5551 Galaxy Microelectronics
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MMBT5551 Galaxy Microelectronics General Purpose NPN Bipolar Transistor; Polarity: NPN; V(BR)CEO Min (V): 160V; IC (A): 0.6A; HFE Min: 80; HFE Max: 250; VCE (V): 5V; IC (mA): 10mA; VCE(SAT) (V): 0.2V; IC (mA)1: 50mA; IB (mA): 5mA; FT Min (MHz): 100 MHz; PTM Max (W): 0.3W; Package: SOT-23; package_code: SOT-23; mfr_package_code: SOT-23
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
Part Package Code SOT-23
Reach Compliance Code unknown
ECCN Code EAR99
Collector Current-Max (IC) 0.6 A
Collector-Emitter Voltage-Max 160 V
Configuration SINGLE
DC Current Gain-Min (hFE) 30
JESD-30 Code R-PDSO-G3
Number of Elements 1
Number of Terminals 3
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type NPN
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 100 MHz

Alternate Parts for MMBT5551

This table gives cross-reference parts and alternative options found for MMBT5551. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MMBT5551, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
MMBT5551 Transistor Shanghai Lunsure Electronic Technology Co Ltd MMBT5551 vs MMBT5551
MMBT5551 Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, Yangzhou Yangjie Electronics Co Ltd MMBT5551 vs MMBT5551
MMBT5551 Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN Infinex MMBT5551 vs MMBT5551
Part Number Description Manufacturer Compare
MMBT5551F2 Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, Yangzhou Yangjie Electronics Co Ltd MMBT5551 vs MMBT5551F2
MMBT5551-Q Small Signal Bipolar Transistor, Diotec Semiconductor AG MMBT5551 vs MMBT5551-Q
2N5551 Small Signal Bipolar Transistor, Taitron Components Inc MMBT5551 vs 2N5551
CXT5551 General Purpose NPN Bipolar Transistor; Polarity: NPN; V(BR)CEO Min (V): 160V; IC (A): 0.6A; HFE Min: 80; HFE Max: 250; VCE (V): 5V; IC (mA): 10mA; VCE(SAT) (V): 0.2V; IC (mA)1: 50mA; IB (mA): 5mA; FT Min (MHz): 100 MHz; PTM Max (W): 0.5W; Package: SOT-89; package_code: SOT-89; mfr_package_code: SOT-89 Galaxy Microelectronics MMBT5551 vs CXT5551
CXT5551 Small Signal Bipolar Transistor, Galaxy Semi-Conductor Co Ltd MMBT5551 vs CXT5551
2N5551 Small Signal Bipolar Transistor, NTE Electronics Inc MMBT5551 vs 2N5551
FMBS5551 Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, NPN, Silicon, SUPERSOT-6, 6 PIN Fairchild Semiconductor Corporation MMBT5551 vs FMBS5551
MMBT5551 Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN Infinex MMBT5551 vs MMBT5551

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