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MMBT5179 by:

RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-236AB

Part Details for MMBT5179 by National Semiconductor Corporation

Overview of MMBT5179 by National Semiconductor Corporation

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Applications Consumer Electronics Education and Research Industrial Automation Audio and Video Systems Electronic Manufacturing

Price & Stock for MMBT5179

Part # Distributor Description Stock Price Buy
Quest Components Bipolar Junction Transistor, NPN Type, SOT-23 25
  • 1 $0.2100
  • 25 $0.1050
$0.1050 / $0.2100 Buy Now

Part Details for MMBT5179

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MMBT5179 Part Data Attributes

MMBT5179 National Semiconductor Corporation
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MMBT5179 National Semiconductor Corporation RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-236AB
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer NATIONAL SEMICONDUCTOR CORP
Reach Compliance Code compliant
Additional Feature LOW NOISE
Collector Current-Max (IC) 0.05 A
Collector-Base Capacitance-Max 1 pF
Collector-Emitter Voltage-Max 12 V
Configuration SINGLE
DC Current Gain-Min (hFE) 25
Highest Frequency Band ULTRA HIGH FREQUENCY BAND
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type NPN
Power Dissipation Ambient-Max 0.225 W
Power Gain-Min (Gp) 15 dB
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application AMPLIFIER
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 900 MHz
VCEsat-Max 0.4 V

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