Datasheets
MMBT2907 by:

Transistor,

Part Details for MMBT2907 by Galaxy Semi-Conductor Co Ltd

Overview of MMBT2907 by Galaxy Semi-Conductor Co Ltd

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Applications Consumer Electronics Audio and Video Systems

Part Details for MMBT2907

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MMBT2907 Part Data Attributes:

MMBT2907 Galaxy Semi-Conductor Co Ltd
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MMBT2907 Galaxy Semi-Conductor Co Ltd Transistor,
Part Life Cycle Code Active
Ihs Manufacturer GALAXY SEMI-CONDUCTOR CO LTD
Package Description SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code unknown
ECCN Code EAR99
Collector Current-Max (IC) 0.6 A
Collector-Base Capacitance-Max 8 pF
Collector-Emitter Voltage-Max 40 V
Configuration SINGLE
DC Current Gain-Min (hFE) 30
JESD-30 Code R-PDSO-G3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type PNP
Power Dissipation Ambient-Max 0.35 W
Power Dissipation-Max (Abs) 0.35 W
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 200 MHz
Turn-off Time-Max (toff) 100 ns
Turn-on Time-Max (ton) 45 ns
VCEsat-Max 1.6 V

Alternate Parts for MMBT2907

This table gives cross-reference parts and alternative options found for MMBT2907. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MMBT2907, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
MMBT4403F2 Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, Yangzhou Yangjie Electronics Co Ltd MMBT2907 vs MMBT4403F2
2N4403 Small Signal Bipolar Transistor, NTE Electronics Inc MMBT2907 vs 2N4403
MMBT4403 Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, Yangzhou Yangjie Electronics Co Ltd MMBT2907 vs MMBT4403
UMT4403U3HZGT106 Small Signal Bipolar Transistor, ROHM Semiconductor MMBT2907 vs UMT4403U3HZGT106
UMT4403U3T146 Small Signal Bipolar Transistor, ROHM Semiconductor MMBT2907 vs UMT4403U3T146
CP593X-2N4403 Small Signal Bipolar Transistor, Central Semiconductor Corp MMBT2907 vs CP593X-2N4403
MMBT4403-HF Small Signal Bipolar Transistor, Comchip Technology Corporation Ltd MMBT2907 vs MMBT4403-HF
MMBT2907 General Purpose PNP Bipolar Transistor; Polarity: PNP; V(BR)CEO Min (V): 40V; IC (A): 0.6A; HFE Min: 100; HFE Max: 300; VCE (V): 10V; IC (mA): 150mA; VCE(SAT) (V): 0.4V; IC (mA)1: 150mA; IB (mA): 15mA; FT Min (MHz): 200 MHz; PTM Max (W): 0.35W; Package: SOT-23; package_code: SOT-23; mfr_package_code: SOT-23 Galaxy Microelectronics MMBT2907 vs MMBT2907
MMBT4403 Small Signal Bipolar Transistor, Surge Components Inc MMBT2907 vs MMBT4403
MMBT4403 General Purpose PNP Bipolar Transistor; Polarity: PNP; V(BR)CEO Min (V): 40V; IC (A): 0.6A; HFE Min: 100; HFE Max: 300; VCE (V): 2V; IC (mA): 150mA; VCE(SAT) (V): 0.4V; IC (mA)1: 150mA; IB (mA): 15mA; FT Min (MHz): 200 MHz; PTM Max (W): 0.35W; Package: SOT-23; package_code: SOT-23; mfr_package_code: SOT-23 Galaxy Microelectronics MMBT2907 vs MMBT4403

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