Datasheets
MMBT100A by:
National Semiconductor Corporation
Fairchild Semiconductor Corporation
National Semiconductor Corporation
onsemi
Rochester Electronics LLC
Texas Instruments
Not Found

Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB

Part Details for MMBT100A by National Semiconductor Corporation

Overview of MMBT100A by National Semiconductor Corporation

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Consumer Electronics Audio and Video Systems

Price & Stock for MMBT100A

Part # Distributor Description Stock Price Buy
Quest Components TRANSISTOR,BJT,NPN,45V V(BR)CEO,SOT-23 464
  • 1 $0.6370
  • 40 $0.3822
  • 158 $0.3185
$0.3185 / $0.6370 Buy Now

Part Details for MMBT100A

MMBT100A CAD Models

There are no models available for this part yet.

Sign in to request this CAD model.

Register or Sign In

MMBT100A Part Data Attributes

MMBT100A National Semiconductor Corporation
Buy Now Datasheet
Compare Parts:
MMBT100A National Semiconductor Corporation Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
Select a part to compare:
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer NATIONAL SEMICONDUCTOR CORP
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.21.00.75
Collector Current-Max (IC) 0.5 A
Collector-Base Capacitance-Max 4.5 pF
Collector-Emitter Voltage-Max 45 V
Configuration SINGLE
DC Current Gain-Min (hFE) 300
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type NPN
Power Dissipation Ambient-Max 0.35 W
Power Dissipation-Max (Abs) 0.35 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application AMPLIFIER
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 250 MHz
VCEsat-Max 0.2 V

MMBT100A Related Parts