Datasheets
MMBT100 by:

Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB

Part Details for MMBT100 by National Semiconductor Corporation

Overview of MMBT100 by National Semiconductor Corporation

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Applications Consumer Electronics Audio and Video Systems

Price & Stock for MMBT100

Part # Distributor Description Stock Price Buy
ComSIT USA NPN GENERAL PURPOSE AMPLIFIER Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon RoHS: Not Compliant Stock EU - 0
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 13778
RFQ

Part Details for MMBT100

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MMBT100 Part Data Attributes

MMBT100 National Semiconductor Corporation
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MMBT100 National Semiconductor Corporation Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer NATIONAL SEMICONDUCTOR CORP
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.21.00.75
Additional Feature LOW NOISE
Collector Current-Max (IC) 0.5 A
Collector-Base Capacitance-Max 4.5 pF
Collector-Emitter Voltage-Max 45 V
Configuration SINGLE
DC Current Gain-Min (hFE) 100
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type NPN
Power Dissipation Ambient-Max 0.35 W
Power Dissipation-Max (Abs) 0.35 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application AMPLIFIER
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 250 MHz
VCEsat-Max 0.2 V

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