Datasheets
MMBF4117 by:

Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-236AB

Part Details for MMBF4117 by National Semiconductor Corporation

Overview of MMBF4117 by National Semiconductor Corporation

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Applications Education and Research Environmental Monitoring Internet of Things (IoT) Space Technology Industrial Automation Smart Cities Aerospace and Defense Agriculture Technology Medical Imaging Virtual Reality (VR), Augmented Reality (AR), and Vision Systems Robotics and Drones

Part Details for MMBF4117

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MMBF4117 Part Data Attributes:

MMBF4117 National Semiconductor Corporation
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MMBF4117 National Semiconductor Corporation Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-236AB
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer NATIONAL SEMICONDUCTOR CORP
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature ULTRA LOW INPUT CURRENT
Configuration SINGLE
FET Technology JUNCTION
Feedback Cap-Max (Crss) 1.5 pF
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode DEPLETION MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 0.225 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application AMPLIFIER
Transistor Element Material SILICON

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