Datasheets
MMBD7000-HE3-08 by: Vishay Intertechnologies

Rectifier Diode, 2 Element, 0.2A, 100V V(RRM), Silicon, ROHS COMPLIANT PACKAGE-3

Part Details for MMBD7000-HE3-08 by Vishay Intertechnologies

Results Overview of MMBD7000-HE3-08 by Vishay Intertechnologies

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Applications Consumer Electronics Space Technology Audio and Video Systems Aerospace and Defense Energy and Power Systems Medical Imaging Entertainment and Gaming Robotics and Drones

MMBD7000-HE3-08 Information

MMBD7000-HE3-08 by Vishay Intertechnologies is a Rectifier Diode.
Rectifier Diodes are under the broader part category of Diodes.

A diode is a electrical part that can control the direction in which the current flows in a device. Consider factors like voltage drop, current capacity, reverse voltage, and operating frequency when selecting a diode. Read more about Diodes on our Diodes part category page.

Price & Stock for MMBD7000-HE3-08

Part # Distributor Description Stock Price Buy
DISTI # 09X4369
Newark Switching Diode Genpurp Sot23 |Vishay MMBD7000-HE3-08 RoHS: Not Compliant Min Qty: 15000 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 10,000 $0.0440
  • 20,000 $0.0370
  • 30,000 $0.0310
$0.0310 / $0.0440 Buy Now
DISTI # MMBD7000-HE3-08
EBV Elektronik Diode Small Signal Switching 100V 02A 3Pin SOT23 TR (Alt: MMBD7000-HE3-08) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 143 Weeks, 0 Days EBV - 0
Buy Now
Vyrian Diodes 15758
RFQ

Part Details for MMBD7000-HE3-08

MMBD7000-HE3-08 CAD Models

MMBD7000-HE3-08 Part Data Attributes

MMBD7000-HE3-08 Vishay Intertechnologies
Buy Now Datasheet
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MMBD7000-HE3-08 Vishay Intertechnologies Rectifier Diode, 2 Element, 0.2A, 100V V(RRM), Silicon, ROHS COMPLIANT PACKAGE-3
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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description ROHS COMPLIANT PACKAGE-3
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.10.00.70
Samacsys Manufacturer Vishay
Application GENERAL PURPOSE
Case Connection UNSPECIFIED
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Diode Element Material SILICON
Diode Type RECTIFIER DIODE
Forward Voltage-Max (VF) 1.1 V
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Pk Forward Current-Max 0.5 A
Number of Elements 2
Number of Phases 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Output Current-Max 0.2 A
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Power Dissipation-Max 0.225 W
Reference Standard AEC-Q101
Rep Pk Reverse Voltage-Max 100 V
Reverse Recovery Time-Max 0.004 µs
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 10

Alternate Parts for MMBD7000-HE3-08

This table gives cross-reference parts and alternative options found for MMBD7000-HE3-08. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MMBD7000-HE3-08, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
MMBD7000 Micro Commercial Components Check for Price Rectifier Diode, 2 Element, 0.15A, Silicon, PLASTIC PACKAGE-3 MMBD7000-HE3-08 vs MMBD7000
MMBD7000-T Micro Commercial Components Check for Price Rectifier Diode, MMBD7000-HE3-08 vs MMBD7000-T
MMBD7000-V-GS08 Vishay Semiconductors Check for Price Diode Small Signal Switching 100V 0.2A 3-Pin SOT-23 T/R MMBD7000-HE3-08 vs MMBD7000-V-GS08
MMBD7000 Lite-On Semiconductor Corporation Check for Price Rectifier Diode, 2 Element, 0.15A, 75V V(RRM), Silicon, GREEN, PLASTIC, SOP-3 MMBD7000-HE3-08 vs MMBD7000
MMBD7000-E3-08 Vishay Intertechnologies $0.0346 Rectifier Diode, 2 Element, 0.2A, 100V V(RRM), Silicon, ROHS COMPLIANT PACKAGE-3 MMBD7000-HE3-08 vs MMBD7000-E3-08
Part Number Manufacturer Composite Price Description Compare
MMBD7000-TP Micro Commercial Components Check for Price Rectifier Diode, 2 Element, 0.2A, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3 MMBD7000-HE3-08 vs MMBD7000-TP
MMBD7000-13 Diodes Incorporated Check for Price Rectifier Diode, 2 Element, 0.3A, 75V V(RRM), Silicon, PLASTIC PACKAGE-3 MMBD7000-HE3-08 vs MMBD7000-13
MMBD7000-G3-08 Vishay Intertechnologies Check for Price Rectifier Diode, 2 Element, 0.2A, 100V V(RRM), Silicon, GREEN PACKAGE-3 MMBD7000-HE3-08 vs MMBD7000-G3-08
MMBD7000 Diodes Incorporated Check for Price Rectifier Diode, 1 Element, 0.15A, 75V V(RRM), Silicon, SOT-323, 3 PIN MMBD7000-HE3-08 vs MMBD7000
MMBD7000-G3-18 Vishay Intertechnologies Check for Price Rectifier Diode, 2 Element, 0.2A, 100V V(RRM), Silicon, GREEN PACKAGE-3 MMBD7000-HE3-08 vs MMBD7000-G3-18
MMBD7000 Promax-Johnton Electronic Corporation Check for Price Rectifier Diode, 2 Element, 0.2A, 100V V(RRM), Silicon, PLASTIC, SOT-23, 3 PIN MMBD7000-HE3-08 vs MMBD7000
MMBD7000L Motorola Mobility LLC Check for Price 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB, CASE 318-07, 3 PIN MMBD7000-HE3-08 vs MMBD7000L
MMBD7000 WEITRON INTERNATIONAL CO., LTD. Check for Price Rectifier Diode, 2 Element, 0.2A, 100V V(RRM), Silicon, LEAD FREE PACKAGE-3 MMBD7000-HE3-08 vs MMBD7000
MMBD7000-V-GS08 Vishay Intertechnologies Check for Price Rectifier Diode, 2 Element, 0.2A, 100V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3 MMBD7000-HE3-08 vs MMBD7000-V-GS08
MMBD7000L Motorola Semiconductor Products Check for Price Rectifier Diode, 2 Element, 0.2A, 100V V(RRM), Silicon, TO-236AB, CASE 318-07, 3 PIN MMBD7000-HE3-08 vs MMBD7000L

MMBD7000-HE3-08 Related Parts

MMBD7000-HE3-08 Frequently Asked Questions (FAQ)

  • The recommended soldering temperature for MMBD7000-HE3-08 is 260°C (500°F) for 10 seconds, with a peak temperature not exceeding 265°C (509°F).

  • Yes, the MMBD7000-HE3-08 is a high-speed diode with a switching time of 4 ns, making it suitable for high-frequency applications up to 1 GHz.

  • The maximum allowable power dissipation for MMBD7000-HE3-08 is 500 mW at an ambient temperature of 25°C (77°F).

  • No, the MMBD7000-HE3-08 is not a radiation-hardened diode. It is not designed for use in high-radiation environments.

  • The storage temperature range for MMBD7000-HE3-08 is -65°C to 150°C (-85°F to 302°F).