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Transistors / Power Bipolar Transistors / MJE4353
Datasheets
MJE4353 by:
onsemi
Freescale Semiconductor
Inchange Semiconductor Company Ltd
Mospec Semiconductor Corp
Motorola Mobility LLC
Motorola Semiconductor Products
NTE Electronics Inc
onsemi
Rochester Electronics LLC
Not Found

16 A, 160 V PNP Bipolar Power Transistor, SOT-93 (T0-218) 4 LEAD, 30-TUBE

Part Details for MJE4353 by onsemi

Results Overview of MJE4353 by onsemi

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

MJE4353 Information

MJE4353 by onsemi is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Part Details for MJE4353

MJE4353 CAD Models

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MJE4353 Part Data Attributes

Parametric Data
MJE4353 onsemi
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MJE4353 onsemi 16 A, 160 V PNP Bipolar Power Transistor, SOT-93 (T0-218) 4 LEAD, 30-TUBE
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Pbfree Code No
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer ONSEMI
Part Package Code SOT-93 (T0-218) 4 LEAD
Package Description CASE 340D-02, 3 PIN
Pin Count 3
Manufacturer Package Code 340D-02
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 4 Weeks
Samacsys Manufacturer onsemi
Case Connection COLLECTOR
Collector Current-Max (IC) 16 A
Collector-Emitter Voltage-Max 160 V
Configuration SINGLE
DC Current Gain-Min (hFE) 8
JEDEC-95 Code TO-218
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 235
Polarity/Channel Type PNP
Power Dissipation-Max (Abs) 125 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 1 MHz

Alternate Parts for MJE4353

This table gives cross-reference parts and alternative options found for MJE4353. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MJE4353, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
MJE4353 Mospec Semiconductor Corp Check for Price Power Bipolar Transistor, 16A I(C), PNP MJE4353 vs MJE4353
Part Number Manufacturer Composite Price Description Compare
MJE4353 Rochester Electronics LLC Check for Price 16A, 160V, PNP, Si, POWER TRANSISTOR, TO-218, CASE 340D-02, 3 PIN MJE4353 vs MJE4353
MJE4353 Motorola Mobility LLC Check for Price 16A, 160V, PNP, Si, POWER TRANSISTOR, TO-218 MJE4353 vs MJE4353
MJE4353G onsemi Check for Price 16 A, 160 V PNP Bipolar Power Transistor, TO-247, 30-TUBE MJE4353 vs MJE4353G
MJE4352 onsemi Check for Price 16A, 140V, PNP, Si, POWER TRANSISTOR, TO-218, CASE 340D-01, 3 PIN MJE4353 vs MJE4352
MJE4352 Motorola Mobility LLC Check for Price 16A, 140V, PNP, Si, POWER TRANSISTOR, TO-218 MJE4353 vs MJE4352
2SA1386 Sanken Electric Co Ltd Check for Price Power Bipolar Transistor, 15A I(C), 160V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, MT-100, TO-3P, 3 PIN MJE4353 vs 2SA1386

MJE4353 Related Parts

MJE4353 Frequently Asked Questions (FAQ)

  • The maximum safe operating area (SOA) for the MJE4353 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. A general rule of thumb is to limit the device's power dissipation to 1/4 of the maximum rated power to ensure reliable operation.

  • To ensure the MJE4353 is properly biased for linear operation, it's essential to set the base-emitter voltage (VBE) to around 0.7V and the collector-emitter voltage (VCE) to around 1/2 of the supply voltage. Additionally, the base current should be limited to prevent saturation and ensure linear operation.

  • The recommended heatsink design for the MJE4353 depends on the specific application and power dissipation requirements. However, as a general guideline, a heatsink with a thermal resistance of around 1-2°C/W is recommended. The heatsink should also be designed to provide good thermal contact with the device, and thermal interface materials (TIMs) can be used to improve heat transfer.

  • While the MJE4353 is primarily designed for linear applications, it can be used in switching applications with some caution. However, the device's switching characteristics, such as turn-on and turn-off times, may not be optimized for high-frequency switching. Additionally, the device's safe operating area (SOA) should be carefully considered to prevent device damage.

  • To protect the MJE4353 from electrostatic discharge (ESD), it's essential to follow proper handling and storage procedures. This includes using anti-static wrist straps, mats, and bags, as well as grounding all equipment and tools. Additionally, ESD protection devices, such as TVS diodes, can be used to protect the device from ESD events.