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Transistors / Power Bipolar Transistors / MJE1123
Datasheets
MJE1123 by:
Motorola Mobility LLC
Freescale Semiconductor
Motorola Mobility LLC
Motorola Semiconductor Products
New Jersey Semiconductor Products Inc
onsemi
Not Found

4A, 40V, PNP, Si, POWER TRANSISTOR, TO-220AB

Part Details for MJE1123 by Motorola Mobility LLC

Results Overview of MJE1123 by Motorola Mobility LLC

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

MJE1123 Information

MJE1123 by Motorola Mobility LLC is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Part Details for MJE1123

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MJE1123 Part Data Attributes

Parametric Data
MJE1123 Motorola Mobility LLC
Buy Now Datasheet
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MJE1123 Motorola Mobility LLC 4A, 40V, PNP, Si, POWER TRANSISTOR, TO-220AB
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Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer MOTOROLA INC
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.95
Additional Feature LEADFORM OPTIONS ARE AVAILABLE
Case Connection COLLECTOR
Collector Current-Max (IC) 4 A
Collector-Emitter Voltage-Max 40 V
Configuration SINGLE
DC Current Gain-Min (hFE) 45
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type PNP
Power Dissipation Ambient-Max 75 W
Power Dissipation-Max (Abs) 75 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 11.5 MHz
VCEsat-Max 0.75 V

Alternate Parts for MJE1123

This table gives cross-reference parts and alternative options found for MJE1123. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MJE1123, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
2SC4110-YA SANYO Semiconductor Co Ltd Check for Price Power Bipolar Transistor, 25A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-218, Plastic/Epoxy, 3 Pin MJE1123 vs 2SC4110-YA
BUT18 NXP Semiconductors Check for Price 6A, 400V, NPN, Si, POWER TRANSISTOR, TO-220AB, PLASTIC, TO-220AB, 3 PIN MJE1123 vs BUT18
2SD1190 onsemi Check for Price 4A, 60V, NPN, Si, POWER TRANSISTOR, TO-220AB, TO-220AB, 3 PIN MJE1123 vs 2SD1190
BUX32 Rochester Electronics LLC Check for Price 8A, 400V, NPN, Si, POWER TRANSISTOR, TO-204AA MJE1123 vs BUX32
KSE180 Fairchild Semiconductor Corporation Check for Price Power Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126, 3 PIN MJE1123 vs KSE180
2SA1480D SANYO Semiconductor Co Ltd Check for Price 0.1A, 300V, PNP, Si, POWER TRANSISTOR, TO-126ML, 3 PIN MJE1123 vs 2SA1480D
TIPL791 JW Miller Check for Price 4A, 400V, NPN, Si, POWER TRANSISTOR, TO-220, TO-220, 3 PIN MJE1123 vs TIPL791
SDT9306 Solitron Devices Inc Check for Price Power Bipolar Transistor, 7.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin MJE1123 vs SDT9306
2N6751 Rochester Electronics LLC Check for Price 10A, 400V, NPN, Si, POWER TRANSISTOR, TO-204AA MJE1123 vs 2N6751
2SC3459 SANYO Electric Co Ltd Check for Price Power Bipolar Transistor, 4.5A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, TO-218, Plastic/Epoxy, 3 Pin, TO-3PB, 3 PIN MJE1123 vs 2SC3459

MJE1123 Related Parts

MJE1123 Frequently Asked Questions (FAQ)

  • The maximum safe operating area (SOA) for the MJE1123 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. As a general rule, it's recommended to operate the transistor within the boundaries of the maximum ratings specified in the datasheet to ensure reliable operation.

  • Thermal management is critical for the MJE1123, as excessive heat can reduce the device's lifespan and affect its performance. Ensure good heat dissipation by using a heat sink, thermal interface material, and a PCB design that allows for adequate airflow. The datasheet provides thermal resistance values that can be used to estimate the junction temperature.

  • The recommended storage temperature range for the MJE1123 is -55°C to 150°C, as specified in the datasheet. Storing the device outside this range can affect its performance and reliability.

  • Yes, the MJE1123 can be used in switching applications, but it's essential to ensure that the device is operated within its safe operating area (SOA) and that the switching frequency is within the recommended range. The datasheet provides information on the device's switching characteristics, such as turn-on and turn-off times.

  • The base resistor value for the MJE1123 depends on the specific application and the required base current. A general rule of thumb is to choose a base resistor value that ensures the base current is within the recommended range specified in the datasheet. A higher base resistor value can reduce the base current, but may also increase the switching time.