Datasheets
MJD45H11TM by:

Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic/Epoxy, 2 Pin, DPAK-3

Part Details for MJD45H11TM by Fairchild Semiconductor Corporation

Overview of MJD45H11TM by Fairchild Semiconductor Corporation

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Price & Stock for MJD45H11TM

Part # Distributor Description Stock Price Buy
Quest Components 8 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-252 69
  • 1 $0.4275
  • 13 $0.3563
  • 57 $0.2850
$0.2850 / $0.4275 Buy Now
ComSIT USA PNP EPITAXIAL SILICON TRANSISTOR Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic/Epoxy, 2 Pin RoHS: Compliant Europe - 2500
RFQ
Chip1Cloud TRANS PNP 80V 8A DPAK 19900
RFQ
Sense Electronic Company Limited SOT252 850
RFQ

Part Details for MJD45H11TM

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MJD45H11TM Part Data Attributes:

MJD45H11TM Fairchild Semiconductor Corporation
Buy Now Datasheet
Compare Parts:
MJD45H11TM Fairchild Semiconductor Corporation Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic/Epoxy, 2 Pin, DPAK-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code DPAK
Package Description DPAK-3
Pin Count 3
Manufacturer Package Code 3LD, TO-252, NOT COMPLIANT TO JEDEC TO-252 VAR. AB, SURFACE MOUNT (DPAK)
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Collector Current-Max (IC) 8 A
Collector-Emitter Voltage-Max 80 V
Configuration SINGLE
DC Current Gain-Min (hFE) 40
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type PNP
Power Dissipation-Max (Abs) 20 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 40 MHz

Alternate Parts for MJD45H11TM

This table gives cross-reference parts and alternative options found for MJD45H11TM. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MJD45H11TM, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
MJD45H11 8A, 80V, PNP, Si, POWER TRANSISTOR Motorola Mobility LLC MJD45H11TM vs MJD45H11
MJD45H11T4 8A, 80V, PNP, Si, POWER TRANSISTOR Motorola Mobility LLC MJD45H11TM vs MJD45H11T4
MJD45H11TF Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic/Epoxy, 2 Pin, DPAK-3 Fairchild Semiconductor Corporation MJD45H11TM vs MJD45H11TF
Part Number Description Manufacturer Compare
MJD45H11T4 8A, 80V, PNP, Si, POWER TRANSISTOR Motorola Mobility LLC MJD45H11TM vs MJD45H11T4
MJD45H11TF Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic/Epoxy, 2 Pin, DPAK-3 Fairchild Semiconductor Corporation MJD45H11TM vs MJD45H11TF
MJD45H11T4 Low voltage PNP power transistor STMicroelectronics MJD45H11TM vs MJD45H11T4
MJD45H11 8A, 80V, PNP, Si, POWER TRANSISTOR Motorola Mobility LLC MJD45H11TM vs MJD45H11

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