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Part Details for MJD45H11-1G by onsemi
Overview of MJD45H11-1G by onsemi
- Distributor Offerings: (12 listings)
- Number of FFF Equivalents: (3 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for MJD45H11-1G
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
26K4445
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Newark | Power Transistor, Pnp, -80V, D-Pak, Transistor Polarity:Pnp, Collector Emitter Voltage V(Br)Ceo:80V, Dc Collector Current:8A, Power Dissipation Pd:20W, Transistor Mounting:Surface Mount, No. Of Pins:3Pins, Dc Current Gain Hfe:60Hfe Rohs Compliant: Yes |Onsemi MJD45H11-1G Min Qty: 675 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$0.3500 / $0.5430 | Buy Now |
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DISTI #
14AC4578
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Newark | Transistor, Pnp, -80V, -8A, To-251, Transistor Polarity:Pnp, Collector Emitter Voltage V(Br)Ceo:-80V, Transition Frequency Ft:90Mhz, Power Dissipation Pd:20W, Dc Collector Current:-8A, Dc Current Gain Hfe:40Hfe, Transistor Case Rohs Compliant: Yes |Onsemi MJD45H11-1G Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$0.4460 / $1.1300 | Buy Now |
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DISTI #
MJD45H11-1GOS-ND
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DigiKey | TRANS PNP 80V 8A IPAK Min Qty: 1 Lead time: 10 Weeks Container: Tube | Temporarily Out of Stock |
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$0.4099 / $1.0900 | Buy Now |
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DISTI #
MJD45H11-1G
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Avnet Americas | Trans GP BJT PNP 80V 8A 3-Pin(3+Tab) IPAK Rail - Rail/Tube (Alt: MJD45H11-1G) RoHS: Compliant Min Qty: 1950 Package Multiple: 75 Lead time: 10 Weeks, 0 Days Container: Tube | 0 |
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$0.4058 / $0.4844 | Buy Now |
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DISTI #
863-MJD45H11-1G
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Mouser Electronics | Bipolar Transistors - BJT 8A 80V 20W PNP RoHS: Compliant | 0 |
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$0.4090 / $1.0900 | Order Now |
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DISTI #
70340245
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RS | ON Semi MJD45H11-1G PNP Bipolar Transistor, 8 A, 80 V, 3-Pin IPAK | ON Semiconductor MJD45H11-1G RoHS: Not Compliant Min Qty: 15 Package Multiple: 1 Container: Bulk | 0 |
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$0.7500 / $0.8800 | RFQ |
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Future Electronics | MJD Series 80 V 8 A Through Hole PNP Complementary Power Transistor RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 75 Lead time: 10 Weeks Container: Tube | 0Tube |
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$0.4000 / $0.4700 | Buy Now |
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Quest Components | POWER BIPOLAR TRANSISTOR, 8A I(C), 80V V(BR)CEO, 1-ELEMENT, PNP, SILICON, PLASTIC/EPOXY, 3 PIN | 1000 |
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$0.6088 / $1.5220 | Buy Now |
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DISTI #
MJD45H11-1G
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Avnet Asia | Trans GP BJT PNP 80V 8A 3-Pin(3+Tab) IPAK Rail (Alt: MJD45H11-1G) RoHS: Compliant Min Qty: 1575 Package Multiple: 75 Lead time: 10 Weeks, 0 Days | 0 |
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$0.3851 / $0.4307 | Buy Now |
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DISTI #
MJD45H11-1G
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Avnet Silica | Trans GP BJT PNP 80V 8A 3-Pin(3+Tab) IPAK Rail (Alt: MJD45H11-1G) RoHS: Compliant Min Qty: 75 Package Multiple: 75 Lead time: 11 Weeks, 0 Days | Silica - 0 |
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Buy Now |
Part Details for MJD45H11-1G
MJD45H11-1G CAD Models
MJD45H11-1G Part Data Attributes:
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MJD45H11-1G
onsemi
Buy Now
Datasheet
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Compare Parts:
MJD45H11-1G
onsemi
8 A, 80 V PNP Power Bipolar Junction Transistor, DPAK INSERTION MOUNT, 75-TUBE
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | DPAK INSERTION MOUNT | |
| Package Description | DPAK-3 | |
| Pin Count | 4 | |
| Manufacturer Package Code | 369 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 67 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 8 A | |
| Collector-Emitter Voltage-Max | 80 V | |
| Configuration | SINGLE | |
| DC Current Gain-Min (hFE) | 40 | |
| JESD-30 Code | R-PSIP-T3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | PNP | |
| Power Dissipation-Max (Abs) | 20 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Transition Frequency-Nom (fT) | 40 MHz |
Alternate Parts for MJD45H11-1G
This table gives cross-reference parts and alternative options found for MJD45H11-1G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MJD45H11-1G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| MJD45H11-1 | Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, IPAK-3 | Samsung Semiconductor | MJD45H11-1G vs MJD45H11-1 |
| MJD45H11-1 | 8A, 80V, PNP, Si, POWER TRANSISTOR, DPAK-3 | onsemi | MJD45H11-1G vs MJD45H11-1 |
| KSH45H11ITU | PNP Epitaxial Silicon Transistor, 5040-TUBE | onsemi | MJD45H11-1G vs KSH45H11ITU |