Part Details for MJD44H11 by Galaxy Microelectronics
Overview of MJD44H11 by Galaxy Microelectronics
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- Part Data Attributes: (Available)
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Applications
Industrial Automation
Energy and Power Systems
Renewable Energy
Motor control systems
Part Details for MJD44H11
MJD44H11 CAD Models
MJD44H11 Part Data Attributes:
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MJD44H11
Galaxy Microelectronics
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Datasheet
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MJD44H11
Galaxy Microelectronics
Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin,
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Part Life Cycle Code | Active | |
Ihs Manufacturer | CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Additional Feature | TUBE: 80 | |
Collector Current-Max (IC) | 8 A | |
Collector-Base Capacitance-Max | 130 pF | |
Collector-Emitter Voltage-Max | 80 V | |
Configuration | SINGLE | |
DC Current Gain-Min (hFE) | 40 | |
JEDEC-95 Code | TO-252 | |
JESD-30 Code | R-PSSO-G2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | NPN | |
Power Dissipation-Max (Abs) | 20 W | |
Reference Standard | MIL-STD-202 | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 50 MHz | |
VCEsat-Max | 1 V |