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MJD44H11 by:

Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin,

Part Details for MJD44H11 by Galaxy Microelectronics

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Applications Industrial Automation Energy and Power Systems Renewable Energy Motor control systems

Part Details for MJD44H11

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MJD44H11 Part Data Attributes:

MJD44H11 Galaxy Microelectronics
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MJD44H11 Galaxy Microelectronics Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin,
Part Life Cycle Code Active
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature TUBE: 80
Collector Current-Max (IC) 8 A
Collector-Base Capacitance-Max 130 pF
Collector-Emitter Voltage-Max 80 V
Configuration SINGLE
DC Current Gain-Min (hFE) 40
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 20 W
Reference Standard MIL-STD-202
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 50 MHz
VCEsat-Max 1 V

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