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Transistors / Power Bipolar Transistors / MJD340T4
Datasheets
MJD340T4 by:
onsemi
Motorola Mobility LLC
Motorola Semiconductor Products
onsemi
Rochester Electronics LLC
STMicroelectronics
Not Found

0.5 A, 300 V High Voltage NPN Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL

Part Details for MJD340T4 by onsemi

Results Overview of MJD340T4 by onsemi

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

MJD340T4 Information

MJD340T4 by onsemi is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for MJD340T4

Part # Distributor Description Stock Price Buy
Bristol Electronics   5850
RFQ
Bristol Electronics   Min Qty: 9 1735
  • 9 $0.5625
  • 37 $0.3656
  • 138 $0.2109
  • 476 $0.1800
  • 1,029 $0.1575
$0.1575 / $0.5625 Buy Now
Quest Components 0.5 A, 300 V, NPN, SI, POWER TRANSISTOR 1388
  • 1 $0.7500
  • 161 $0.2250
  • 890 $0.1950
$0.1950 / $0.7500 Buy Now
Quest Components 0.5 A, 300 V, NPN, SI, POWER TRANSISTOR 132
  • 1 $0.4500
  • 12 $0.3750
  • 54 $0.3000
$0.3000 / $0.4500 Buy Now

Part Details for MJD340T4

MJD340T4 CAD Models

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MJD340T4 Part Data Attributes

Parametric Data
MJD340T4 onsemi
Buy Now Datasheet
Compare Parts:
MJD340T4 onsemi 0.5 A, 300 V High Voltage NPN Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL
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Pbfree Code No
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer ONSEMI
Part Package Code DPAK (SINGLE GAUGE) TO-252
Package Description PLASTIC, CASE 369C, DPAK-3
Pin Count 3
Manufacturer Package Code 369C
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer onsemi
Case Connection COLLECTOR
Collector Current-Max (IC) 0.5 A
Collector-Emitter Voltage-Max 300 V
Configuration SINGLE
DC Current Gain-Min (hFE) 30
JESD-30 Code R-PSSO-G2
JESD-609 Code e0
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 235
Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 15 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for MJD340T4

This table gives cross-reference parts and alternative options found for MJD340T4. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MJD340T4, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
MJD340 Taitron Components Inc Check for Price Power Bipolar Transistor, MJD340T4 vs MJD340
MJD340 onsemi Check for Price 0.5 A, 300 V High Voltage NPN Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 75-TUBE MJD340T4 vs MJD340
MJD340RLG onsemi Check for Price 0.5 A, 300 V High Voltage NPN Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 1800-REEL MJD340T4 vs MJD340RLG
MJD340RL onsemi Check for Price 0.5 A, 300 V High Voltage NPN Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 1800-REEL MJD340T4 vs MJD340RL

MJD340T4 Related Parts

MJD340T4 Frequently Asked Questions (FAQ)

  • The maximum safe operating area (SOA) for the MJD340T4 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. A safe operating area can be determined by considering the device's maximum junction temperature, voltage, and current ratings.

  • To ensure the MJD340T4 is properly biased for linear operation, the base-emitter voltage (VBE) should be set to around 0.7V, and the collector-emitter voltage (VCE) should be set to a value that allows the transistor to operate in the active region. The exact biasing conditions may vary depending on the specific application and circuit design.

  • The recommended PCB layout and thermal management for the MJD340T4 involve using a heat sink with a thermal resistance of around 1°C/W or lower, and ensuring good thermal conductivity between the device and the heat sink. The PCB layout should also be designed to minimize thermal resistance and ensure good airflow around the device.

  • The MJD340T4 is a general-purpose transistor and is not optimized for high-frequency applications. It has a transition frequency (fT) of around 30MHz, which makes it suitable for low-to-medium frequency applications. For high-frequency applications, a transistor with a higher fT and optimized for high-frequency operation should be used.

  • To protect the MJD340T4 from electrostatic discharge (ESD), it is recommended to use ESD protection devices such as TVS diodes or ESD protection arrays, and to follow proper handling and storage procedures to prevent ESD damage.