Datasheets
MJD31TF by: Fairchild Semiconductor Corporation

Power Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin, DPAK-3

Part Details for MJD31TF by Fairchild Semiconductor Corporation

Overview of MJD31TF by Fairchild Semiconductor Corporation

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Applications Industrial Automation Energy and Power Systems Renewable Energy

Part Details for MJD31TF

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MJD31TF Part Data Attributes:

MJD31TF Fairchild Semiconductor Corporation
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MJD31TF Fairchild Semiconductor Corporation Power Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin, DPAK-3
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code TO-252
Package Description SMALL OUTLINE, R-PSSO-G2
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
Collector Current-Max (IC) 3 A
Collector-Emitter Voltage-Max 40 V
Configuration SINGLE
DC Current Gain-Min (hFE) 10
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2
JESD-609 Code e0
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 140 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 15 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application AMPLIFIER
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 3 MHz

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